Datasheet > MURF3060CTR

MURF3060CTR

更新时间： 2024-11-02 01:11:43

品牌	Logo	应用领域
THINKISEMI		/
页数	文件大小	规格书
2页	761K
描述
30.0 Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MURF3060CTR 数据手册

MURF3020CTR thru MURF3060CTR

MURF3020CTR/MURF3040CTR/MURF3060CTR

Pb Free Plating Product

30.0 Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers

ITO-220AB/TO-220F-3L

Unit : inch (mm)

Features

ꢀ

Fast switching for high efficiency

Low forward voltage drop

High current capability

.189(4.8)

.406(10.3)

.165(4.2)

.381(9.7)

.134(3.4)

.130(3.3)

.118(3.0)

.114(2.9)

Low reverse leakage current

High surge current capability

Application

Automotive Inverters and Solar Inverters

ꢀ

Plating Power Supply,SMPS and UPS

Car Audio Amplifiers and Sound Device Systems

.114(2.9)

.098(2.5)

.071(1.8)

.055(1.4)

.039(1.0)

.035(0.9)

.011(0.3)

.032(.8)

MAX

Mechanical Data

(2.55)

ꢀ

Case: ITO-220AB full plastic isolated package

Epoxy: UL 94V-0 rate flame retardant

Terminals: Solderable per MIL-STD-202

method 208

(2.55)

Case

ꢀ

Polarity: As marked on diode body

Mounting position: Any

Weight: 2.2 gram approximately

Doubler

Tandem Polarity Tandem Polarity

Suffix "CTD" Suffix "CTS"

Series

Negative

Common Cathode Common Anode

Suffix "CT" Suffix "CTR"

Positive

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

℃

Rating at 25 ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

UNIT

SYMBOL

MURF3020CTR MURF3040CTR MURF3060CTR

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

RRM

RMS

200

140

200

400

280

400

600

420

600

Maximum DC Blocking Voltage

Maximum Average Forward Rectified

30.0

300

1.3

IF(AV)

℃

(Total Device 2x15A=30A)

Current TC

=125

Peak Forward Surge Current, 8.3ms single

Half sine-wave superimposed on rated load

(JEDEC method)

FSM

Maximum Instantaneous Forward Voltage

0.98

1.7

(Per Diode/Per Leg)

@ 15A

5.0

100

μA

Maximum DC Reverse Current @T

At Rated DC Blocking Voltage @T

=25

℃

=125

Maximum Reverse Recovery Time (Note 1)

Typical junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

Trr

35-50

150

2.0

℃

Operating Junction and Storage

Temperature Range

-55 to + 150

℃

T , TSTG

NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.

(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

(3) Thermal Resistance junction to case.

Page 1/2

http://www.thinkisemi.com.tw/

Rev.08T

中文翻译

下载PDF

与MURF3060CTR相关器件

型号	品牌	获取价格	描述	数据表
MURF3060CTS	THINKISEMI	获取价格	30.0 Ampere Insulated Dual Series Connection Ultra Fast Recovery Rectifiers
MURF3060HCT	MDD	获取价格	SUPER FAST RECTIFIERS
MURF3060PT	DIOTECH	获取价格	SUPER FAST RECOVERY SILICON RECTIFIER
MURF3060PT	THINKISEMI	获取价格	30.0 Ampere Insulated Dual Doubler Ultra Fast Recovery Rectifier Diodes
MURF3060PTA	THINKISEMI	获取价格	30.0 Ampere Insulated Dual Doubler Ultra Fast Recovery Rectifier Diodes
MURF3060PTD	THINKISEMI	获取价格	30.0 Ampere Insulated Dual Doubler Ultra Fast Recovery Rectifier Diodes
MURF30H60	CJ	获取价格	TO-220F-2L
MURF30H60L	CJ	获取价格	TO-220F-2L
MURF360B	YANGJIE	获取价格	SMB
MURF365BF	YANGJIE	获取价格	SMBF

与MURF3060CTR相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

4
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

2
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

23
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

24

产品中心

服务支持

精选活动

关于我们

帮助中心

MURF3060CTR

MURF3060CTR 数据手册

与MURF3060CTR相关器件

与MURF3060CTR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MURF3060CTR

MURF3060CTR 数据手册

与MURF3060CTR相关器件

与MURF3060CTR相关文章

您还可以找

您在本页遇到什么问题？