Datasheet > MURF40060

MURF40060

更新时间： 2024-11-03 01:09:51

品牌	Logo	应用领域
GENESIC		/
页数	文件大小	规格书
3页	352K
描述
Silicon Super Fast Recovery Diode

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中文翻译

获取价格

数据手册

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MURF40060 数据手册

MURF40040 thru MURF40060R

V_RRM= 400 V - 600 V

I_F(AV)= 400 A

Silicon Super Fast

Recovery Diode

Features

• High Surge Capability

• Types from 400 V to 600 V V_RRM

• Not ESD Sensitive

TO-244 Package

Maximum ratings, at T_j= 25 °C, unless otherwise specified ("R" devices have leads reversed)

Conditions

MURF40060(R)

Parameter

Symbol

MURF40040(R)

Unit

V_RRM

600

Repetitive peak reverse voltage

400

V_RMS

V_DC

T_j

420

RMS reverse voltage

DC blocking voltage

Operating temperature

Storage temperature

280

600

400

-55 to 150

°C

T_stg

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Conditions

T_C= 140 °C

MURF40060(R)

Parameter

Symbol

I_F(AV)

I_FSM

MURF40040(R)

Unit

400

Average forward current (per pkg)

Peak forward surge current (per leg)

400

t_p= 8.3 ms, half sine

3300

Maximum instantaneous forward

voltage (per leg)

V_F

I_FM= 200 A, T_j= 25 °C

1.70

1.30

T_j= 25 °C

T_j= 125 °C

μA

Maximum reverse current at rated DC

blocking voltage (per leg)

I_R

I_F=0.5 A, I_R=1.0 A,

Maximum reverse recovery time (per

leg)

T_rr

240

180

_RR= 0.25 A

Thermal characteristics

Maximum thermal resistance, junction -

case (per leg)

R_ΘJC

0.35

°C/W

www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/

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与MURF40060相关器件

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MURF550	DYELEC	获取价格	Low forward voltage, high current capability
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