Datasheet > MURF805

MURF805

更新时间： 2024-11-02 10:41:47

品牌	Logo	应用领域
DIOTECH		超快速恢复二极管
页数	文件大小	规格书
2页	679K
描述
SUPER FAST RECOVERY SILICON RECTIFIER

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中文翻译

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数据手册

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MURF805 数据手册

MURF805 THRU MURF860

SUPER FAST RECOVERY SILICON RECTIFIER

Reverse Voltage - 50 to 600 Volts

Forward Current - 8.0 Ampere

FEATURES

ITO-220AC

Glass Passivated Die Construction

4.5± 0.2

+0.2

-0.1

10.2± 0.2

3.1

Super-Fast Switching

Low Forward Voltage Drop

Low Reverse Leakage Current

High Surge Current Capability

Plastic Material has UL Flammability

Classification 94V-O

4.0± 0.3

1.4± 0.1

0.6± 0.1

MECHANICAL DATA

2.6± 0.2

Case: ITO-220AC, Full Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

0.6± 0.1

5.0± 0.1

Polarity: See Diagram

Weight: 2.24 grams (approx.)

Mounting Position: Any

Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.

Dimensions in millimeters

PIN 1 +

PIN 3 -

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

MURF

820

MURF

805

MURF

810

MURF

815

MURF

830

MURF

Characteristic

Symbol

Unit

840

400

280

860

600

420

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

RWM

100

150

105

200

300

210

R(RMS)

RMS Reverse Voltage

140

8.0

Average Rectified Output Current

@T_C= 105°C

Non-Repetitive Peak Forward Surge

Current 8.3ms Single half sine-wave

superimposed on rated load (JEDEC Method)

125

FSM

Forward Voltage

@I_F= 8.0A

0.95

1.3

1.7

Peak Reverse Current

At Rated DC Blocking Voltage @T_A= 125°C

@T_A= 25°C

400

µA

Reverse Recovery Time (Note 1)

°C

Typical Junction Capacitance (Note 2)

Operating and Storage Temperature Range

T^j, T^STG

-65 to +150

Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

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