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MURF3060CTS PDF预览

MURF3060CTS

更新时间： 2024-09-24 01:11:43
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
2页 761K
描述
30.0 Ampere Insulated Dual Series Connection Ultra Fast Recovery Rectifiers

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MURF3060CTS 数据手册

 浏览型号MURF3060CTS的Datasheet PDF文件第2页 
MURF3020CTS thru MURF3060CTS  
MURF3020CTS/MURF3040CTS/MURF3060CTS  
Pb Free Plating Product  
30.0 Ampere Insulated Dual Series Connection Ultra Fast Recovery Rectifiers  
ITO-220AB/TO-220F-3L  
Unit : inch (mm)  
Features  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Fast switching for high efficiency  
Low forward voltage drop  
High current capability  
.189(4.8)  
.406(10.3)  
.165(4.2)  
.381(9.7)  
.134(3.4)  
.130(3.3)  
.118(3.0)  
.114(2.9)  
Low reverse leakage current  
High surge current capability  
Application  
Automotive Inverters and Solar Inverters  
ꢀ
ꢀ
ꢀ
Plating Power Supply,SMPS and UPS  
Car Audio Amplifiers and Sound Device Systems  
.114(2.9)  
.098(2.5)  
.071(1.8)  
.055(1.4)  
.055(1.4)  
.039(1.0)  
.035(0.9)  
.011(0.3)  
.032(.8)  
MAX  
Mechanical Data  
.1  
(2.55)  
.1  
ꢀ
ꢀ
ꢀ
Case: ITO-220AB full plastic isolated package  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
(2.55)  
Case  
Case  
Case  
Case  
ꢀ
ꢀ
ꢀ
Polarity: As marked on diode body  
Mounting position: Any  
Weight: 2.2 gram approximately  
Doubler  
Tandem Polarity Tandem Polarity  
Suffix "CTD" Suffix "CTS"  
Series  
Negative  
Common Cathode Common Anode  
Suffix "CT" Suffix "CTA"  
Positive  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
℃
Rating at 25 ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
UNIT  
SYMBOL  
MURF3020CTS MURF3040CTS MURF3060CTS  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
RRM  
RMS  
200  
140  
200  
400  
280  
400  
600  
420  
600  
V
Maximum DC Blocking Voltage  
V
DC  
Maximum Average Forward Rectified  
30.0  
300  
1.3  
A
A
V
IF(AV)  
℃
(Total Device 2x15A=30A)  
Current TC  
=125  
Peak Forward Surge Current, 8.3ms single  
Half sine-wave superimposed on rated load  
(JEDEC method)  
I
FSM  
Maximum Instantaneous Forward Voltage  
V
F
0.98  
1.7  
(Per Diode/Per Leg)  
@ 15A  
5.0  
100  
μA  
μA  
Maximum DC Reverse Current @T  
At Rated DC Blocking Voltage @T  
J
=25  
℃
℃
I
R
J
=125  
nS  
pF  
Maximum Reverse Recovery Time (Note 1)  
Typical junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Trr  
35-50  
150  
C
J
R
JC  
2.0  
℃
/W  
Operating Junction and Storage  
Temperature Range  
-55 to + 150  
℃
T , TSTG  
J
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.  
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
(3) Thermal Resistance junction to case.  
Page 1/2  
http://www.thinkisemi.com.tw/  
Rev.08T  
© 1995 Thinki Semiconductor Co., Ltd.  
12

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