Datasheet > MURF30H60L

MURF30H60L

更新时间： 2024-09-24 14:55:35

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
5页	1199K
描述
TO-220F-2L

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MURF30H60L 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-220F-2L Plastic-Encapsulate Diode

MURF30H60L

HYPERFAST RECTIFIER,FRED

MAIN CHARACTERISTICS

TO-220F-2L

I_O

V_RRM

T_rr

30A

600V

29ns

T_j

175℃

V_F(typ)

1.06V(@T_j=150℃)

FEATURES



Ultrafast Recovery Times and Low Recovery Loss

Low Forward Voltage

1. CATHODE

2. ANODE

Low Reverse Leakage Current

APPLICATIONS

Specifically designed to improve efficiency of PFC and output rectification stages of EV / HEV battery

charging stations, booster stage of solar inverters and UPS applications, these devices are perfectly

matched to operate with MOSFETs or high speed IGBTs.

MARKING

MURF30H60L = Device code

Solid dot = Green molding compound device

if none, the normal device

XXXX = Code

MUR

F30H60L

XXXX

MAXIMUM RATINGS ( T_C=25℃ unless otherwise noted )

Symbol

Parameter

Unit

MURF30H60L

V_RRM

V_R

Peak Repetitive Reverse Voltage

DC Blocking Voltage

600

I_F(AV)

I_F(RMS)

I_FSM

P_D

Average Forward Current(T_C=70℃)

RMS Forward Current(T_C=70℃)

Non-Repetitive Surge Forward Current (8.3ms）

344

Power dissipation

2.6

R_ΘJC

T_j

Thermal Resistance From Junction to Case

Operating Junction Temperature Range

Storage Temperature Range

℃/W

℃

-55 ~ +175

T_stg

℃

www.jscj-elec.com

Rev . - 1.1

12 3 4 5

中文翻译

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