Datasheet > MURF40020

MURF40020

更新时间： 2024-11-03 01:01:23

品牌	Logo	应用领域
GENESIC		/
页数	文件大小	规格书
3页	342K
描述
Silicon Super Fast Recovery Diode

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中文翻译

获取价格

数据手册

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MURF40020 数据手册

MURH10005 thru MURH10020R

V_RRM= 50 V - 200 V

I_F(AV)= 100 A

Silicon Super Fast

Recovery Diode

Features

• High Surge Capability

• Types from 50 V to 200 V V_RRM

• Not ESD Sensitive

D-67 Package

Maximum ratings, at T_j= 25 °C, unless otherwise specified ("R" devices have leads reversed)

Conditions

MURH10020(R)

Parameter

Symbol

MURH10005(R)

MURH10010(R)

Unit

V_RRM

200

Repetitive peak reverse voltage

100

V_RMS

V_DC

T_j

140

RMS reverse voltage

DC blocking voltage

Operating temperature

Storage temperature

200

100

-55 to 150

°C

T_stg

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Conditions

MURH10020(R)

Parameter

Symbol

MURH10005(R)

MURH10010(R)

Unit

Average forward current (per

pkg)

T_C= 140 °C

I_F(AV)

I_FSM

V_F

100

t_p= 8.3 ms, half sine

2000

Peak forward surge current

2000

Maximum instantaneous

forward voltage

_FM= 100 A, T_j= 25 °C

1.0

T_j= 25 °C

T_j= 125 °C

μA

Maximum reverse current at

rated DC blocking voltage

I_R

I_F=0.5 A, I_R=1.0 A,

T_rr

Maximum reverse recovery time

_RR= 0.25 A

Thermal characteristics

Maximum thermal resistance,

junction - case

R_ΘJC

0.45

°C/W

www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/

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中文翻译

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与MURF40020相关器件

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MURF40020R	GENESIC	获取价格	Silicon Super Fast Recovery Diode
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MURF40060	GENESIC	获取价格	Silicon Super Fast Recovery Diode
MURF40060R	GENESIC	获取价格	Silicon Super Fast Recovery Diode
MURF4060CT	JINANJINGHENG	获取价格	GLASS PASSIVATED SUPER FAST RECTIFIER
MURF510	DYELEC	获取价格	Low forward voltage, high current capability
MURF520	DYELEC	获取价格	Low forward voltage, high current capability
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MURF540	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, Silicon, TO-220AC, PLASTIC, ITO-220AC, 3 PIN