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MURF40010R PDF预览

MURF40010R

更新时间: 2024-02-05 06:31:45
品牌 Logo 应用领域
GENESIC /
页数 文件大小 规格书
3页 342K
描述
Silicon Super Fast Recovery Diode

MURF40010R 数据手册

 浏览型号MURF40010R的Datasheet PDF文件第2页浏览型号MURF40010R的Datasheet PDF文件第3页 
MURH10005 thru MURH10020R  
VRRM = 50 V - 200 V  
IF(AV) = 100 A  
Silicon Super Fast  
Recovery Diode  
Features  
• High Surge Capability  
• Types from 50 V to 200 V VRRM  
• Not ESD Sensitive  
D-67 Package  
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)  
Conditions  
MURH10020(R)  
Parameter  
Symbol  
MURH10005(R)  
MURH10010(R)  
Unit  
VRRM  
200  
Repetitive peak reverse voltage  
50  
100  
V
VRMS  
VDC  
Tj  
140  
RMS reverse voltage  
DC blocking voltage  
Operating temperature  
Storage temperature  
35  
70  
V
V
200  
50  
100  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
°C  
°C  
Tstg  
Electrical characteristics, at Tj = 25 °C, unless otherwise specified  
Conditions  
MURH10020(R)  
Parameter  
Symbol  
MURH10005(R)  
MURH10010(R)  
Unit  
Average forward current (per  
pkg)  
TC = 140 °C  
IF(AV)  
IFSM  
VF  
100  
100  
100  
A
A
V
tp = 8.3 ms, half sine  
2000  
Peak forward surge current  
2000  
2000  
Maximum instantaneous  
forward voltage  
I
FM = 100 A, Tj = 25 °C  
1.0  
1.0  
1.0  
Tj = 25 °C  
Tj = 125 °C  
25  
3
25  
3
25  
3
μA  
Maximum reverse current at  
rated DC blocking voltage  
IR  
mA  
IF=0.5 A, IR=1.0 A,  
Trr  
75  
Maximum reverse recovery time  
75  
75  
nS  
I
RR= 0.25 A  
Thermal characteristics  
Maximum thermal resistance,  
junction - case  
RΘJC  
0.45  
0.45  
0.45  
°C/W  
1
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/  

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