Datasheet > MURF3060PTD

MURF3060PTD

更新时间： 2024-02-13 21:30:44

品牌	Logo	应用领域
THINKISEMI		/
页数	文件大小	规格书
2页	691K
描述
30.0 Ampere Insulated Dual Doubler Ultra Fast Recovery Rectifier Diodes

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MURF3060PTD 数据手册

MURF3020PTD thru MURF3060PTD

Pb Free Plating Product

30.0 Ampere Insulated Dual Doubler Ultra Fast Recovery Rectifier Diodes

Unit: inch (mm)

TO-3P(H)IS

Features

.217 (5.5)

.130 (3.3)

.610 (15.5)

ꢀDual rectifier construction, positive center-tap

ꢀPlastic package has Underwriters Laboratory

Flammability Classification 94V0

.177

(4.5)

.378

(9.6)

ꢀGlass passivated chip junctions

ꢀSuperfast recovery time, high voltage

ꢀLow forward voltage, high current capability

ꢀLow thermal resistance

.965

(24.5)

ꢀLow power loss, high efficiency

.177

(4.5)

ꢀHigh temperature soldering guaranteed:

260 C, 0.16”(4.06mm)from case for 10 seconds

.720

(18.3)

Min

Mechanical Data

Cases: Insulated/Isolated TO-3P(H)IS

ꢀ

.215 (5.47)

.138 (3.5)

ꢀTerminals: Pure tin plated, lead free solderable per

MIL-STD-750. Method 2026

ꢀPolarity: As marked

ꢀMounting position: Any

Positive

Common Cathode

Suffix "PT"

ꢀMounting torque: 10in-lbs. Max.

ꢀWeight: 0.2 ounce, 5.6 gram approximately

Negative

Common Anode

Suffix "PTA"

Doubler

Tandem Polarity

Suffix "PTD"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25

C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

MURF3020PT MURF3040PT MURF3060PT

MURF3020PTA MURF3040PTA MURF3060PTA

MURF3020PTD MURF3040PTD MURF3060PTD

UNIT

SYMBOL

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

200

140

200

400

280

400

600

420

600

Maximum DC Blocking Voltage

Maximum Average Forward Rectified

Current TC=125^oC

30.0

300

1.3

IF(AV)

Peak Forward Surge Current, 8.3ms single

Half sine-wave superimposed on rated load

(JEDEC method)

IFSM

Maximum Instantaneous Forward Voltage

@ 15.0 A

0.98

1.7

Maximum DC Reverse Current @TJ=25^oC

At Rated DC Blocking Voltage @TJ=125^oC

500

Maximum Reverse Recovery Time (Note 1)

Typical junction Capacitance (Note 2)

Trr

^oC

150

Operating Junction and Storage

Temperature Range

J, TSTG

-55 to +150

NOTES : (1) Reverse recovery test conditions I

(2) Thermal Resistance junction to terminal.

(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

= 0.5A I

= 1 0A Irr = 0.25A.

Rev.04

Page 1/2

http://www.thinkisemi.com/

中文翻译

下载PDF

与MURF3060PTD相关器件

型号	品牌	获取价格	描述	数据表
MURF30H60	CJ	获取价格	TO-220F-2L
MURF30H60L	CJ	获取价格	TO-220F-2L
MURF360B	YANGJIE	获取价格	SMB
MURF365BF	YANGJIE	获取价格	SMBF
MURF40005	GENESIC	获取价格	Silicon Super Fast Recovery Diode
MURF40005R	GENESIC	获取价格	Silicon Super Fast Recovery Diode
MURF40010	GENESIC	获取价格	Silicon Super Fast Recovery Diode
MURF40010R	GENESIC	获取价格	Silicon Super Fast Recovery Diode
MURF40020	GENESIC	获取价格	Silicon Super Fast Recovery Diode
MURF40020R	GENESIC	获取价格	Silicon Super Fast Recovery Diode