Datasheet > MURF3040CT-LF

MURF3040CT-LF

更新时间： 2024-11-01 20:06:31

品牌	Logo	应用领域
WTE		超快速恢复二极管局域网
页数	文件大小	规格书
4页	43K
描述
Rectifier Diode, 1 Phase, 2 Element, 15A, 400V V(RRM), Silicon, TO-220AB, ITO-220, 3 PIN

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MURF3040CT-LF 数据手册

MURF3020CT – MURF3060CT

30A GLASS PASSIVATED DUAL SUPERFAST RECTIFIER

WON-TOP ELECTRONICS

Features



Glass Passivated Die Construction



Superfast 35nS and 50nS Recovery Time

Low Forward Voltage Drop

Low Reverse Leakage Current

ITO-220

Dim

Min

14.60

9.70

2.55

—

Max

15.40

10.30

2.85

High Surge Current Capability

Epoxy Meets UL 94V-0 Classification

Ideally Suited for Use in High Frequency

SMPS, Inverters and As Free Wheeling Diodes

PIN1

4.16

13.00

0.50

3.00 Ø

6.30

4.20

2.50

0.50

2.60

2.29

13.80

0.75

3.50 Ø

6.90

Mechanical Data



Case: ITO-220, Full Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: See Diagram

Weight: 1.9 grams (approx.)

4.80

2.90

0.75



3.30

2.79

Mounting Position: Any

All Dimensions in mm

Mounting Torque: 0.6 N.m Max.

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

PIN 1

PIN 3

PIN 2

Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

MURF

3020CT

MURF

3030CT

MURF

3040CT

MURF

3060CT

Characteristic

Symbol

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

200

140

300

210

400

280

600

420

RMS Reverse Voltage

VR(RMS)

Average Rectified Output Current

@T_C= 110°C

Total Device

Per Diode

Non-Repetitive Peak Forward Surge Current 8.3ms

Single Half Sine-Wave Superimposed on Rated Load

(JEDEC Method)

IFSM

200

Forward Voltage per diode

@I_F= 15A

VFM

IRM

1.05

1.25

1.7

Peak Reverse Current

At Rated DC Blocking Voltage

@T_C= 25°C

@T_C= 100°C

500

µA

Reverse Recovery Time (Note 1)

trr

Typical Junction Capacitance (Note 2)

175

145

Thermal Resistance Junction to Ambient per diode

Thermal Resistance Junction to Case per diode

RθJA

RθJC

4.0

°C/W

RMS Isolation Voltage, t = 1 min

VISO

1500

Operating and Storage Temperature Range

Note: 1. Measured with I_F= 0.5A, I_R= 1.0A, I_RR= 0.25A.

TJ, TSTG

-55 to +150

°C

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

Revision: March, 2014

www.wontop.com

12 3 4

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