Datasheet > MURF3040

MURF3040

更新时间： 2024-11-01 21:14:27

品牌	Logo	应用领域
WTE		超快速软恢复二极管局域网
页数	文件大小	规格书
4页	42K
描述
Rectifier Diode, 1 Phase, 1 Element, 30A, 400V V(RRM), Silicon, TO-220AC, ITO-220A, 2 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MURF3040 数据手册

MURF3020 – MURF3060

30A GLASS PASSIVATED SUPERFAST RECTIFIER

WON-TOP ELECTRONICS

Features



Planar Die Construction



Superfast 35nS and 50nS Recovery Time

Low Forward Voltage Drop

Low Reverse Leakage Current

ITO-220A

Dim

Min

14.60

9.70

2.55

—

Max

15.40

10.30

2.85

Soft Recovery Characteristics

Epoxy Meets UL 94V-0 Classification

Ideally Suited for Use in High Frequency

SMPS, Inverters and As Free Wheeling Diodes

PIN1

4.16

13.00

0.30

3.00 Ø

6.30

4.20

2.50

0.36

2.60

4.83

13.80

0.90

3.50 Ø

6.90

Mechanical Data



Case: ITO-220A, Full Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: See Diagram

Weight: 1.9 grams (approx.)

4.80

2.90

0.80



3.30

5.33

Mounting Position: Any

All Dimensions in mm

Mounting Torque: 0.6 N.m Max.

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

PIN 1

PIN 3

Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Characteristic

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Symbol

MURF3020

MURF3040

MURF3060

Unit

VRRM

VRWM

200

140

400

600

420

RMS Reverse Voltage

VR(RMS)

280

Average Rectified Output Current

@T_C= 110°C

Non-Repetitive Peak Forward Surge Current 8.3ms Single Half

Sine-Wave Superimposed on Rated Load (JEDEC Method)

IFSM

VFM

IRM

325

1.3

Forward Voltage

@I_F= 30A

1.1

1.5

Peak Reverse Current

@T_C= 25°C

250

1.0

µA

At Rated DC Blocking Voltage

@T_C= 100°C

Reverse Recovery Time (Note 1)

trr

Typical Junction Capacitance (Note 2)

175

145

Thermal Resistance Junction to Ambient

Thermal Resistance Junction to Case

RθJA

RθJC

3.0

°C/W

RMS Isolation Voltage, t = 1 min

VISO

1500

Operating and Storage Temperature Range

TJ, TSTG

-65 to +175

°C

Note: 1. Measured with I_F= 0.5A, I_R= 1.0A, I_RR= 0.25A.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

Revision: March, 2014

www.wontop.com

12 3 4

中文翻译

下载PDF

与MURF3040相关器件

型号	品牌	获取价格	描述	数据表
MURF3040CT	BEL	获取价格	30.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers
MURF3040CT	MDD	获取价格	SUPER FAST RECTIFIERS
MURF3040CT	WON-TOP	获取价格	Powerpack
MURF3040CTA	BEL	获取价格	30.0 Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers
MURF3040CTD	NSC	获取价格	30.0 Ampere Insulated Dual Doubler Polarity Ultra Fast Recovery Rectifiers
MURF3040CT-LF	WTE	获取价格	Rectifier Diode, 1 Phase, 2 Element, 15A, 400V V(RRM), Silicon, TO-220AB, ITO-220, 3 PIN
MURF3040CTR	THINKISEMI	获取价格	30.0 Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers
MURF3040CTS	THINKISEMI	获取价格	30.0 Ampere Insulated Dual Series Connection Ultra Fast Recovery Rectifiers
MURF3040PT	DIOTECH	获取价格	SUPER FAST RECOVERY SILICON RECTIFIER
MURF3040PT	THINKISEMI	获取价格	30.0 Ampere Insulated Dual Doubler Ultra Fast Recovery Rectifier Diodes

与MURF3040相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

4
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

2
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

23
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

24

产品中心

服务支持

精选活动

关于我们

帮助中心

MURF3040

MURF3040 数据手册

与MURF3040相关器件

与MURF3040相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MURF3040

MURF3040 数据手册

与MURF3040相关器件

与MURF3040相关文章

您还可以找

您在本页遇到什么问题？