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MURF3040CT PDF预览

MURF3040CT

更新时间： 2024-11-02 14:54:11
品牌 Logo 应用领域
WON-TOP /
页数 文件大小 规格书
4页 43K
描述
Powerpack

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中文翻译

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MURF3040CT 技术参数

生命周期：Active包装说明：R-PSFM-T3
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.72
其他特性：FREE WHEELING DIODE应用：SUPER FAST RECOVERY
外壳连接：ISOLATED配置：COMMON CATHODE, 2 ELEMENTS
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：1.25 VJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3最大非重复峰值正向电流：200 A
元件数量：2相数：1
端子数量：3最高工作温度：150 °C
最低工作温度：-55 °C最大输出电流：15 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT最大重复峰值反向电压：400 V
最大反向电流：10 µA最大反向恢复时间：0.05 µs
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLEBase Number Matches：1

MURF3040CT 数据手册

 浏览型号MURF3040CT的Datasheet PDF文件第2页浏览型号MURF3040CT的Datasheet PDF文件第3页浏览型号MURF3040CT的Datasheet PDF文件第4页 
®
MURF3020CT – MURF3060CT  
30A GLASS PASSIVATED DUAL SUPERFAST RECTIFIER  
WON-TOP ELECTRONICS  
Features  
Glass Passivated Die Construction  
B
Superfast 35nS and 50nS Recovery Time  
Low Forward Voltage Drop  
Low Reverse Leakage Current  
ITO-220  
C
Dim  
A
B
C
D
E
Min  
14.60  
9.70  
2.55  
—
Max  
15.40  
10.30  
2.85  
High Surge Current Capability  
G
A
E
Epoxy Meets UL 94V-0 Classification  
Ideally Suited for Use in High Frequency  
SMPS, Inverters and As Free Wheeling Diodes  
PIN1  
2
3
4.16  
D
13.00  
0.50  
3.00 Ø  
6.30  
4.20  
2.50  
0.50  
2.60  
2.29  
13.80  
0.75  
F
G
H
I
3.50 Ø  
6.90  
Mechanical Data  
F
Case: ITO-220, Full Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: See Diagram  
Weight: 1.9 grams (approx.)  
4.80  
P
J
2.90  
K
L
0.75  
I
3.30  
P
2.79  
Mounting Position: Any  
H
L
J
All Dimensions in mm  
Mounting Torque: 0.6 N.m Max.  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
PIN 1  
PIN 3  
PIN 2  
K
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
MURF  
3020CT  
MURF  
3030CT  
MURF  
3040CT  
MURF  
3060CT  
Characteristic  
Symbol  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
200  
140  
300  
210  
400  
280  
600  
420  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
V
A
Average Rectified Output Current  
@TC = 110°C  
Total Device  
Per Diode  
30  
15  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single Half Sine-Wave Superimposed on Rated Load  
(JEDEC Method)  
IFSM  
200  
A
Forward Voltage per diode  
@IF = 15A  
VFM  
IRM  
1.05  
35  
1.25  
1.7  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TC = 25°C  
@TC = 100°C  
10  
500  
µA  
Reverse Recovery Time (Note 1)  
trr  
50  
nS  
pF  
Typical Junction Capacitance (Note 2)  
CJ  
175  
145  
Thermal Resistance Junction to Ambient per diode  
Thermal Resistance Junction to Case per diode  
RθJA  
RθJC  
62  
4.0  
°C/W  
RMS Isolation Voltage, t = 1 min  
VISO  
1500  
V
Operating and Storage Temperature Range  
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.  
TJ, TSTG  
-55 to +150  
°C  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
© Won-Top Electronics Co., Ltd.  
Revision: March, 2014  
www.wontop.com  
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