Datasheet > MURF3020PT

MURF3020PT

更新时间： 2024-11-02 02:58:15

品牌	Logo	应用领域
THINKISEMI		/
页数	文件大小	规格书
2页	691K
描述
30.0 Ampere Insulated Dual Doubler Ultra Fast Recovery Rectifier Diodes

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中文翻译

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数据手册

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MURF3020PT 数据手册

MURF3020PTD thru MURF3060PTD

Pb Free Plating Product

30.0 Ampere Insulated Dual Doubler Ultra Fast Recovery Rectifier Diodes

Unit: inch (mm)

TO-3P(H)IS

Features

.217 (5.5)

.130 (3.3)

.610 (15.5)

ꢀDual rectifier construction, positive center-tap

ꢀPlastic package has Underwriters Laboratory

Flammability Classification 94V0

.177

(4.5)

.378

(9.6)

ꢀGlass passivated chip junctions

ꢀSuperfast recovery time, high voltage

ꢀLow forward voltage, high current capability

ꢀLow thermal resistance

.965

(24.5)

ꢀLow power loss, high efficiency

.177

(4.5)

ꢀHigh temperature soldering guaranteed:

260 C, 0.16”(4.06mm)from case for 10 seconds

.720

(18.3)

Min

Mechanical Data

Cases: Insulated/Isolated TO-3P(H)IS

ꢀ

.215 (5.47)

.138 (3.5)

ꢀTerminals: Pure tin plated, lead free solderable per

MIL-STD-750. Method 2026

ꢀPolarity: As marked

ꢀMounting position: Any

Positive

Common Cathode

Suffix "PT"

ꢀMounting torque: 10in-lbs. Max.

ꢀWeight: 0.2 ounce, 5.6 gram approximately

Negative

Common Anode

Suffix "PTA"

Doubler

Tandem Polarity

Suffix "PTD"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25

C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

MURF3020PT MURF3040PT MURF3060PT

MURF3020PTA MURF3040PTA MURF3060PTA

MURF3020PTD MURF3040PTD MURF3060PTD

UNIT

SYMBOL

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

200

140

200

400

280

400

600

420

600

Maximum DC Blocking Voltage

Maximum Average Forward Rectified

Current TC=125^oC

30.0

300

1.3

IF(AV)

Peak Forward Surge Current, 8.3ms single

Half sine-wave superimposed on rated load

(JEDEC method)

IFSM

Maximum Instantaneous Forward Voltage

@ 15.0 A

0.98

1.7

Maximum DC Reverse Current @TJ=25^oC

At Rated DC Blocking Voltage @TJ=125^oC

500

Maximum Reverse Recovery Time (Note 1)

Typical junction Capacitance (Note 2)

Trr

^oC

150

Operating Junction and Storage

Temperature Range

J, TSTG

-55 to +150

NOTES : (1) Reverse recovery test conditions I

(2) Thermal Resistance junction to terminal.

(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

= 0.5A I

= 1 0A Irr = 0.25A.

Rev.04

Page 1/2

http://www.thinkisemi.com/

中文翻译

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与MURF3020PT相关器件

型号	品牌	获取价格	描述	数据表
MURF3020PTA	THINKISEMI	获取价格	30.0 Ampere Insulated Dual Doubler Ultra Fast Recovery Rectifier Diodes
MURF3020PTD	THINKISEMI	获取价格	30.0 Ampere Insulated Dual Doubler Ultra Fast Recovery Rectifier Diodes
MURF3030CT	WTE	获取价格	Rectifier Diode, 1 Phase, 2 Element, 15A, 300V V(RRM), Silicon, TO-220AB, ITO-220, 3 PIN
MURF3030CT	WON-TOP	获取价格	Powerpack
MURF3030CT-LF	WTE	获取价格	Rectifier Diode, 1 Phase, 2 Element, 15A, 300V V(RRM), Silicon, TO-220AB, ITO-220, 3 PIN
MURF3030PT	DIOTECH	获取价格	SUPER FAST RECOVERY SILICON RECTIFIER
MURF3040	WTE	获取价格	Rectifier Diode, 1 Phase, 1 Element, 30A, 400V V(RRM), Silicon, TO-220AC, ITO-220A, 2 PIN
MURF3040	WON-TOP	获取价格	Powerpack
MURF3040CT	BEL	获取价格	30.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers
MURF3040CT	MDD	获取价格	SUPER FAST RECTIFIERS

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