Datasheet > MURF3030PT

MURF3030PT

更新时间： 2024-09-14 11:57:07

品牌	Logo	应用领域
DIOTECH		超快速恢复二极管
页数	文件大小	规格书
2页	783K
描述
SUPER FAST RECOVERY SILICON RECTIFIER

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中文翻译

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数据手册

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MURF3030PT 数据手册

MURF3005PT THRU MURF3060PT

SUPER FAST RECOVERY SILICON RECTIFIER

Reverse Voltage - 50 to 600 Volts

Forward Current - 30.0 Ampere

FEATURES

TO-3P

Glass Passivated Die Construction

15.8± 0.2

8.0± 0.2

5.0± 0.15

2.0± 0.15

Super-Fast Switching

Low Forward Voltage Drop

Low Reverse Leakage Current

High Surge Current Capability

Plastic Material has UL Flammability

Classification 94V-O

3.6± 0.15

2.4± 0.2

MECHANICAL DATA

2.2± 0.15

1.2± 0.15

3.0± 0.1

Case: TO-3P, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-750, Method 2026

Polarity: See Diagram

0.6± 0.1

Weight: 5.6 grams (approx.)

Mounting Position: Any

Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.

5.4± 0.15

Dimensions in millimeters

PIN 1 -

PIN 3 -

Case, PIN 2

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

MURF

3020PT

MURF

Characteristic

Symbol

Unit

3005PT 3010PT 3015PT

3030PT 3040PT 3060PT

RRM

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RWM

100

150

105

200

300

210

400

280

600

420

R(RMS)

RMS Reverse Voltage

140

Average Rectified Output Current

@T_C= 100°C

Non-Repetitive Peak Forward Surge

Current 8.3ms Single half sine-wave

superimposed on rated load (JEDEC Method)

FSM

300

Forward Voltage

@I_F= 15.0A

V^FM

0.975

1.3

1.7

Peak Reverse Current

At Rated DC Blocking Voltage @T_A= 100°C

@T_A= 25°C

500

µA

Reverse Recovery Time (Note 1)

°C

Typical Junction Capacitance (Note 2)

Operating and Storage Temperature Range

150

120

STG

T, T

-65 to +150

Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

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