Datasheet > MURF3020CTS

MURF3020CTS

更新时间： 2024-11-02 01:11:43

品牌	Logo	应用领域
THINKISEMI		/
页数	文件大小	规格书
2页	761K
描述
30.0 Ampere Insulated Dual Series Connection Ultra Fast Recovery Rectifiers

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中文翻译

获取价格

数据手册

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MURF3020CTS 数据手册

MURF3020CTS thru MURF3060CTS

MURF3020CTS/MURF3040CTS/MURF3060CTS

Pb Free Plating Product

30.0 Ampere Insulated Dual Series Connection Ultra Fast Recovery Rectifiers

ITO-220AB/TO-220F-3L

Unit : inch (mm)

Features

ꢀ

Fast switching for high efficiency

Low forward voltage drop

High current capability

.189(4.8)

.406(10.3)

.165(4.2)

.381(9.7)

.134(3.4)

.130(3.3)

.118(3.0)

.114(2.9)

Low reverse leakage current

High surge current capability

Application

Automotive Inverters and Solar Inverters

ꢀ

Plating Power Supply,SMPS and UPS

Car Audio Amplifiers and Sound Device Systems

.114(2.9)

.098(2.5)

.071(1.8)

.055(1.4)

.039(1.0)

.035(0.9)

.011(0.3)

.032(.8)

MAX

Mechanical Data

(2.55)

ꢀ

Case: ITO-220AB full plastic isolated package

Epoxy: UL 94V-0 rate flame retardant

Terminals: Solderable per MIL-STD-202

method 208

(2.55)

Case

ꢀ

Polarity: As marked on diode body

Mounting position: Any

Weight: 2.2 gram approximately

Doubler

Tandem Polarity Tandem Polarity

Suffix "CTD" Suffix "CTS"

Series

Negative

Common Cathode Common Anode

Suffix "CT" Suffix "CTA"

Positive

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

℃

Rating at 25 ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

UNIT

SYMBOL

MURF3020CTS MURF3040CTS MURF3060CTS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

RRM

RMS

200

140

200

400

280

400

600

420

600

Maximum DC Blocking Voltage

Maximum Average Forward Rectified

30.0

300

1.3

IF(AV)

℃

(Total Device 2x15A=30A)

Current TC

=125

Peak Forward Surge Current, 8.3ms single

Half sine-wave superimposed on rated load

(JEDEC method)

FSM

Maximum Instantaneous Forward Voltage

0.98

1.7

(Per Diode/Per Leg)

@ 15A

5.0

100

μA

Maximum DC Reverse Current @T

At Rated DC Blocking Voltage @T

=25

℃

=125

Maximum Reverse Recovery Time (Note 1)

Typical junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

Trr

35-50

150

2.0

℃

Operating Junction and Storage

Temperature Range

-55 to + 150

℃

T , TSTG

NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.

(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

(3) Thermal Resistance junction to case.

Page 1/2

http://www.thinkisemi.com.tw/

Rev.08T

中文翻译

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与MURF3020CTS相关器件

型号	品牌	获取价格	描述	数据表
MURF3020-LF	WTE	获取价格	Rectifier Diode, 1 Phase, 1 Element, 30A, 200V V(RRM), Silicon, TO-220AC, ITO-220A, 2 PIN
MURF3020PT	DIOTECH	获取价格	SUPER FAST RECOVERY SILICON RECTIFIER
MURF3020PT	THINKISEMI	获取价格	30.0 Ampere Insulated Dual Doubler Ultra Fast Recovery Rectifier Diodes
MURF3020PTA	THINKISEMI	获取价格	30.0 Ampere Insulated Dual Doubler Ultra Fast Recovery Rectifier Diodes
MURF3020PTD	THINKISEMI	获取价格	30.0 Ampere Insulated Dual Doubler Ultra Fast Recovery Rectifier Diodes
MURF3030CT	WTE	获取价格	Rectifier Diode, 1 Phase, 2 Element, 15A, 300V V(RRM), Silicon, TO-220AB, ITO-220, 3 PIN
MURF3030CT	WON-TOP	获取价格	Powerpack
MURF3030CT-LF	WTE	获取价格	Rectifier Diode, 1 Phase, 2 Element, 15A, 300V V(RRM), Silicon, TO-220AB, ITO-220, 3 PIN
MURF3030PT	DIOTECH	获取价格	SUPER FAST RECOVERY SILICON RECTIFIER
MURF3040	WTE	获取价格	Rectifier Diode, 1 Phase, 1 Element, 30A, 400V V(RRM), Silicon, TO-220AC, ITO-220A, 2 PIN

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