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MRF5S19100HR3 PDF预览

MRF5S19100HR3

更新时间： 2024-01-01 07:41:43
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摩托罗拉 - MOTOROLA 晶体射频场效应晶体管功率场效应晶体管放大器局域网
页数 文件大小 规格书
12页 727K
描述
The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF5S19100HR3 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：FLANGE MOUNT, R-CDFM-F2针数：2
Reach Compliance Code：unknownECCN代码：5A991
HTS代码：8541.29.00.75风险等级：5.14
Is Samacsys：N外壳连接：SOURCE
配置：SINGLE最小漏源击穿电压：65 V
FET 技术：METAL-OXIDE SEMICONDUCTOR最高频带：L BAND
JESD-30 代码：R-CDFM-F2元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：200 °C封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：269 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：AMPLIFIER
晶体管元件材料：SILICONBase Number Matches：1

MRF5S19100HR3 数据手册

 浏览型号MRF5S19100HR3的Datasheet PDF文件第2页浏览型号MRF5S19100HR3的Datasheet PDF文件第3页浏览型号MRF5S19100HR3的Datasheet PDF文件第4页浏览型号MRF5S19100HR3的Datasheet PDF文件第5页浏览型号MRF5S19100HR3的Datasheet PDF文件第6页浏览型号MRF5S19100HR3的Datasheet PDF文件第7页 
MOTOROLA  
SEMICONDUCTOR TECHNICAL DATA  
Freescale Semiconductor, Inc.  
Order this document  
by MRF5S19100H/D  
The RF MOSFET Line  
RF Power Field Effect Transistors  
N-Channel Enhancement-Mode Lateral MOSFETs  
MRF5S19100HR3  
MRF5S19100HSR3  
Designed for PCN and PCS base station applications with frequencies up to  
1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier  
applications.  
• Typical 2-Carrier N-CDMA Performance: VDD = 28 Volts,  
1990 MHz, 22 W AVG, 28 V  
2 x N-CDMA  
LATERAL N-CHANNEL  
RF POWER MOSFETs  
I
DQ = 1000 mA, Pout = 22 Watts Avg., Full Frequency Band. IS-95 (Pilot,  
Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =  
1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.  
Power Gain — 13.9 dB  
Drain Efficiency — 25.5%  
IM3 @ 2.5 MHz Offset — -36.5 dBc @ 1.2288 MHz Channel Bandwidth  
ACPR @ 885 kHz Offset — -50.7 dBc @ 30 kHz Channel Bandwidth  
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW  
Output Power  
• Characterized with Series Equivalent Large-Signal Impedance Parameters  
• Internally Matched, Controlled Q, for Ease of Use  
• Qualified Up to a Maximum of 32 VDD Operation  
• Integrated ESD Protection  
CASE 465-06, STYLE 1  
NI-780  
MRF5S19100HR3  
• Lower Thermal Resistance Package  
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.  
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.  
CASE 465A-06, STYLE 1  
NI-780S  
MRF5S19100HSR3  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
65  
Unit  
Vdc  
Vdc  
Drain-Source Voltage  
Gate-Source Voltage  
V
DSS  
V
-0.5, +15  
GS  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
269  
1.54  
W
W/°C  
C
D
Storage Temperature Range  
Operating Junction Temperature  
T
- 65 to +150  
200  
°C  
°C  
stg  
T
J
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Value (1)  
Unit  
Thermal Resistance, Junction to Case  
Case Temperature 75°C, 100 W CW  
Case Temperature 70°C, 22 W CW  
R
θ
JC  
°C/W  
0.64  
0.65  
(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf.  
Select Documentation/Application Notes - AN1955.  
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and  
packaging MOS devices should be observed.  
REV 2  
Motorola, Inc. 2004  
For More Information On This Product,  
Go to: www.freescale.com  
 
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