Datasheet > MRF1513NT1_0806

MRF1513NT1_0806

更新时间： 2024-11-23 04:39:07

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
16页	504K
描述
RF Power Field Effect Transistor

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MRF1513NT1_0806 数据手册

Document Number: MRF1513N

Rev. 11, 6/2008

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

MRF1513NT1

Designed for broadband commercial and industrial applications with frequen-

cies to 520 MHz. The high gain and broadband performance of this device

make it ideal for large-signal, common source amplifier applications in 7.5 volt

portable and 12.5 volt mobile FM equipment.

• Specified Performance @ 520 MHz, 12.5 Volts

Output Power — 3 Watts

Power Gain — 15 dB

Efficiency — 65%

520 MHz, 3 W, 12.5 V

LATERAL N-CHANNEL

BROADBAND

• Capable of Handling 20:1 VSWR, @ 15.5 Vdc,

520 MHz, 2 dB Overdrive

RF POWER MOSFET

Features

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal

Impedance Parameters

• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

• In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,

7 Inch Reel.

CASE 466-03, STYLE 1

PLD-1.5

PLASTIC

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +40

Unit

Vdc

Adc

Drain-Source Voltage

Gate-Source Voltage

DSS

Drain Current — Continuous

(1)

Total Device Dissipation @ T = 25°C

Derate above 25°C

31.25

0.25

W/°C

Storage Temperature Range

Operating Junction Temperature

Table 2. Thermal Characteristics

- 65 to +150

150

°C

stg

(2)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Table 3. Moisture Sensitivity Level

Test Methodology

°C/W

Rating

Package Peak Temperature

Unit

Per JESD 22-A113, IPC/JEDEC J-STD-020

260

°C

J –

1. Calculated based on the formula P

θJC

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF1513NT1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...16

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