Datasheet > MRF1513T1

MRF1513T1

更新时间： 2024-11-19 04:39:07

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
16页	480K
描述
RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET

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MRF1513T1 数据手册

Document Number: MRF1513

Rev. 7, 5/2006

Freescale Semiconductor

Technical Data

Replaced by MRF1513NT1. There are no form, fit or function changes with this part

replacement. N suffix added to part number to indicate transition to lead-free

terminations.

MRF1513T1

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

Designed for broadband commercial and industrial applications with frequen-

cies to 520 MHz. The high gain and broadband performance of this device

make it ideal for large-signal, common source amplifier applications in 7.5 volt

portable and 12.5 volt mobile FM equipment.

520 MHz, 3 W, 12.5 V

LATERAL N-CHANNEL

BROADBAND

• Specified Performance @ 520 MHz, 12.5 Volts

Output Power — 3 Watts

Power Gain — 11 dB

Efficiency — 55%

RF POWER MOSFET

• Capable of Handling 20:1 VSWR, @ 15.5 Vdc,

520 MHz, 2 dB Overdrive

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal

Impedance Parameters

• Broadband UHF/VHF Demonstration Amplifier Information

Available Upon Request

CASE 466-03, STYLE 1

PLD-1.5

• In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,

7 Inch Reel.

PLASTIC

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +40

Unit

Vdc

Adc

Drain-Source Voltage

Gate-Source Voltage

DSS

Drain Current — Continuous

(1)

Total Device Dissipation @ T = 25°C

Derate above 25°C

31.25

0.25

W/°C

Storage Temperature Range

Operating Junction Temperature

Table 2. Thermal Characteristics

- 65 to +150

150

°C

stg

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Table 3. Moisture Sensitivity Level

Test Methodology

°C/W

Rating

Package Peak Temperature

Unit

Per JESD 22-A113, IPC/JEDEC J-STD-020

260

°C

J –

1. Calculated based on the formula P

θJC

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF1513T1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...16

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