Datasheet > MRF1518NT1

MRF1518NT1

更新时间： 2024-11-19 03:12:15

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频放大器 PC
页数	文件大小	规格书
18页	718K
描述
RF Power Field Effect Transistor

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数据手册

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MRF1518NT1 数据手册

Document Number: MRF1518N

Rev. 9, 9/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

MRF1518NT1

Designed for broadband commercial and industrial applications with frequen-

cies to 520 MHz. The high gain and broadband performance of this device

make it ideal for large-signal, common source amplifier applications in 12.5 volt

mobile FM equipment.

• Specified Performance @ 520 MHz, 12.5 Volts

Output Power — 8 Watts

520 MHz, 8 W, 12.5 V

LATERAL N-CHANNEL

BROADBAND

Power Gain — 11 dB

Efficiency — 55%

• Capable of Handling 20:1 VSWR, @ 15.5 Vdc,

RF POWER MOSFET

520 MHz, 2 dB Overdrive

Features

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal

Impedance Parameters

• Broadband UHF/VHF Demonstration Amplifier

Information Available Upon Request

• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

CASE 466-03, STYLE 1

PLD-1.5

• Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,

7 Inch Reel.

PLASTIC

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +40

Unit

Vdc

Adc

Drain-Source Voltage

Gate-Source Voltage

DSS

Drain Current — Continuous

(1)

Total Device Dissipation @ T = 25°C

Derate above 25°C

62.5

0.50

W/°C

Storage Temperature Range

Operating Junction Temperature

Table 2. Thermal Characteristics

- 65 to +150

150

°C

stg

(2)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Table 3. Moisture Sensitivity Level

Test Methodology

°C/W

Rating

Package Peak Temperature

Unit

Per JESD 22-A113, IPC/JEDEC J-STD-020

260

°C

J –

1. Calculated based on the formula P

θJC

2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF1518NT1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...18

中文翻译

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与MRF1518NT1相关器件

型号	品牌	获取价格	描述	数据表
MRF1518NT1_06	FREESCALE	获取价格	RF Power Field Effect Transistor
MRF1518NT1_08	FREESCALE	获取价格	RF Power Field Effect Transistor
MRF1518T1	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF1518T1	MOTOROLA	获取价格	RF Power Field Effect Transistor
MRF151A	TE	获取价格	The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET
MRF151A	MACOM	获取价格	MOSFET
MRF151BD	MACOM	获取价格	RF Power MOSFET Transistor 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET
MRF151D	MACOM	获取价格	RF Power Field-Effect Transistor 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET
MRF151G	ASI	获取价格	RF FIELD-EFFECT POWER TRANSISTOR
MRF151G	MOTOROLA	获取价格	N-CHANNEL BROADBAND RF POWER MOSFET

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