Datasheet > MRF151G

MRF151G

更新时间： 2024-11-19 14:48:15

品牌	Logo	应用领域
MACOM		局域网放大器晶体管
页数	文件大小	规格书
10页	877K
描述
1 RF Power MSOFET Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET

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MRF151G 数据手册

MRF151G

RF Power Field-Effect Transistor

300 W, 50 V, 175 MHz N-Channel Broadband MOSFET

Rev. V1

Features

Guaranteed Performance at 175 MHz, 50 V:

Package Outline



Output Power — 300 W

Gain — 14 dB (16 dB Typ)

Efficiency — 50%

Low Thermal Resistance — 0.35°C/W

Ruggedness Tested at Rated Output Power

Nitride Passivated Die for Enhanced Reliability

Description and Applications

Designed for broadband commercial and military

applications at frequencies to 175 MHz. The high

power, high gain and broadband performance of this

device makes possible solid state transmitters for

FM broadcast or TV channel frequency bands.

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

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MRF151G 替代型号

型号	品牌	替代类型	描述	数据表
MRF176GV	MACOM	类似代替	The RF MOSFET Line 200/150W, 500MHz, 50V
SD2932	STMICROELECTRONICS	功能相似	RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs

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