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MPSW64RL PDF预览

MPSW64RL

更新时间: 2024-11-07 13:11:47
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摩托罗拉 - MOTOROLA 晶体晶体管达林顿晶体管
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4页 157K
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MPSW64RL 数据手册

 浏览型号MPSW64RL的Datasheet PDF文件第2页浏览型号MPSW64RL的Datasheet PDF文件第3页浏览型号MPSW64RL的Datasheet PDF文件第4页 
Order this document  
by MPSW63/D  
SEMICONDUCTOR TECHNICAL DATA  
PNP Silicon  
COLLECTOR 3  
*Motorola Preferred Device  
BASE  
2
EMITTER 1  
MAXIMUM RATINGS  
1
2
3
MPSW63  
MPSW64  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Unit  
Vdc  
V
CES  
–30  
–30  
CASE 29–05, STYLE 1  
TO–92 (TO–226AE)  
V
Vdc  
CBO  
EBO  
V
–10  
Vdc  
Collector Current — Continuous  
I
C
–500  
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.0  
8.0  
Watt  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
2.5  
20  
Watts  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
125  
50  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Max  
Unit  
CollectorEmitter Breakdown Voltage  
V
–30  
Vdc  
nAdc  
nAdc  
(BR)CES  
(I = –100 µAdc, V  
C BE  
= 0)  
Collector Cutoff Current  
(V = –30 Vdc, I = 0)  
I
–100  
–100  
CBO  
CB  
Emitter Cutoff Current  
(V = –10 Vdc, I = 0)  
E
I
EBO  
EB  
C
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1996  

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