MPSW92RLRE

更新时间： 2024-11-26 13:00:27

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管高压放大器
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4页	137K
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数据手册

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MPSW92RLRE 数据手册

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SEMICONDUCTOR TECHNICAL DATA

PNP Silicon

Motorola Preferred Device

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

CASE 29–05, STYLE 1

TO–92 (TO–226AE)

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Value

Unit

Vdc

CEO

CBO

EBO

–300

–5.0

Vdc

Collector Current — Continuous

–500

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.0

8.0

Watt

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

2.5

Watts

mW/°C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

125

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

(1)

Collector–Emitter Breakdown Voltage

(I = –1.0 mAdc, I = 0)

–300

–5.0

—

Vdc

(BR)CEO

Collector–Base Breakdown Voltage

(I = –100 µAdc, I = 0)

(BR)CBO

Emitter–Base Breakdown Voltage

(I = –100 µAdc, I = 0)

—

Vdc

(BR)EBO

Collector Cutoff Current

(V = –200 Vdc, I = 0)

–0.25

–0.1

µAdc

CBO

Emitter Cutoff Current

(V = –3.0 Vdc, I = 0)

—

EBO

1. Pulse Test: Pulse Width

300 s, Duty Cycle

2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

12 3 4

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