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MPSW92RLRE PDF预览

MPSW92RLRE

更新时间: 2024-11-04 13:00:27
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摩托罗拉 - MOTOROLA 晶体晶体管高压放大器
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MPSW92RLRE 数据手册

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Order this document  
by MPSW92/D  
SEMICONDUCTOR TECHNICAL DATA  
PNP Silicon  
Motorola Preferred Device  
COLLECTOR  
3
2
BASE  
1
EMITTER  
1
2
3
MAXIMUM RATINGS  
CASE 29–05, STYLE 1  
TO–92 (TO–226AE)  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
Unit  
Vdc  
V
CEO  
V
CBO  
V
EBO  
–300  
–300  
–5.0  
Vdc  
Vdc  
Collector Current — Continuous  
I
C
–500  
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.0  
8.0  
Watt  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
2.5  
20  
Watts  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
125  
50  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
(1)  
CollectorEmitter Breakdown Voltage  
(I = –1.0 mAdc, I = 0)  
V
V
–300  
–300  
–5.0  
Vdc  
Vdc  
(BR)CEO  
C
B
Collector–Base Breakdown Voltage  
(I = –100 µAdc, I = 0)  
(BR)CBO  
C
E
Emitter–Base Breakdown Voltage  
(I = –100 µAdc, I = 0)  
V
Vdc  
(BR)EBO  
E
C
Collector Cutoff Current  
(V = –200 Vdc, I = 0)  
I
–0.25  
–0.1  
µAdc  
µAdc  
CBO  
CB  
Emitter Cutoff Current  
(V = –3.0 Vdc, I = 0)  
E
I
EBO  
EB  
C
1. Pulse Test: Pulse Width  
300 s, Duty Cycle  
2.0%.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1996  

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