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MPSW92G PDF预览

MPSW92G

更新时间: 2024-09-18 12:33:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管开关高压
页数 文件大小 规格书
4页 104K
描述
One Watt High Voltage Transistor

MPSW92G 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-92包装说明:LEAD FREE, CASE 29-10, TO-92, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.31Is Samacsys:N
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:300 V
配置:SINGLE最小直流电流增益 (hFE):25
JEDEC-95代码:TO-226JESD-30 代码:O-PBCY-T3
JESD-609代码:e1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
Base Number Matches:1

MPSW92G 数据手册

 浏览型号MPSW92G的Datasheet PDF文件第2页浏览型号MPSW92G的Datasheet PDF文件第3页浏览型号MPSW92G的Datasheet PDF文件第4页 
MPSW92  
One Watt High Voltage  
Transistor  
PNP Silicon  
http://onsemi.com  
Features  
PbFree Packages are Available*  
COLLECTOR  
3
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
300  
300  
5.0  
Unit  
Vdc  
2
BASE  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
V
CEO  
V
CBO  
V
EBO  
Vdc  
1
Vdc  
EMITTER  
Collector Current Continuous  
I
C
500  
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.0  
8.0  
W
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
2.5  
20  
W
mW/°C  
C
TO92 1 WATT  
(TO226)  
CASE 2910  
STYLE 1  
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
1
1
2
3
THERMAL CHARACTERISTICS  
Characteristic  
2
3
Symbol  
Max  
Unit  
STRAIGHT LEAD  
BULK PACK  
BENT LEAD  
TAPE & REEL  
AMMO PACK  
Thermal Resistance,  
JunctiontoAmbient  
R
125  
°C/W  
q
JA  
Thermal Resistance, Junction to Case  
R
50  
°C/W  
q
JC  
MARKING DIAGRAM  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
MPS  
W92  
YWWG  
G
MPSW45x = Device Code  
x = 45A Devices  
A
Y
= Assembly Location  
= Year  
WW  
G
= Work Week  
= PbFree Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
August, 2010 Rev. 5  
MPSW92/D  

MPSW92G 替代型号

型号 品牌 替代类型 描述 数据表
KSP92BU ONSEMI

类似代替

PNP外延硅晶体管
MPSW92RLRA ONSEMI

类似代替

500mA, 300V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-10, TO-226AE, 3 PIN
MPSW92RLRAG ONSEMI

类似代替

One Watt High Voltage Transistor

与MPSW92G相关器件

型号 品牌 获取价格 描述 数据表
MPSW92-J61Z TI

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300V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3
MPSW92RL ONSEMI

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500mA, 300V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-10, TO-226AE, 3 PIN
MPSW92RL MOTOROLA

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Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
MPSW92RL1 ONSEMI

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TRANSISTOR 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-10, TO-226AE, 3
MPSW92RL1 MOTOROLA

获取价格

500mA, 300V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSW92RLRA MOTOROLA

获取价格

500mA, 300V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSW92RLRA ONSEMI

获取价格

500mA, 300V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-10, TO-226AE, 3 PIN
MPSW92RLRA ROCHESTER

获取价格

500mA, 300V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-10, TO-226AE, 3 PIN
MPSW92RLRAG ONSEMI

获取价格

One Watt High Voltage Transistor
MPSW92RLRAG ROCHESTER

获取价格

500mA, 300V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-10, TO-226AE, 3 PIN