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MPSW64ZL1 PDF预览

MPSW64ZL1

更新时间: 2024-09-18 15:44:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体管
页数 文件大小 规格书
34页 337K
描述
500mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AE, 3 PIN

MPSW64ZL1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
HTS代码:8541.29.00.75风险等级:5.49
其他特性:EUROPEAN PART NUMBER最大集电极电流 (IC):0.5 A
配置:DARLINGTON最小直流电流增益 (hFE):20000
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):125 MHzBase Number Matches:1

MPSW64ZL1 数据手册

 浏览型号MPSW64ZL1的Datasheet PDF文件第2页浏览型号MPSW64ZL1的Datasheet PDF文件第3页浏览型号MPSW64ZL1的Datasheet PDF文件第4页浏览型号MPSW64ZL1的Datasheet PDF文件第5页浏览型号MPSW64ZL1的Datasheet PDF文件第6页浏览型号MPSW64ZL1的Datasheet PDF文件第7页 
SEMICONDUCTOR TECHNICAL DATA  
PNP Silicon  
COLLECTOR 3  
*Motorola Preferred Device  
BASE  
2
EMITTER 1  
1
2
3
CASE 29–05, STYLE 1  
TO–92 (TO–226AE)  
MAXIMUM RATINGS  
MPSW63  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
MPSW64  
Unit  
Vdc  
V
–30  
CES  
CBO  
EBO  
V
V
–30  
Vdc  
–10  
Vdc  
Collector Current — Continuous  
I
C
–500  
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.0  
8.0  
Watt  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
2.5  
20  
Watts  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
125  
50  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Max  
Unit  
CollectorEmitter Breakdown Voltage  
V
–30  
Vdc  
nAdc  
nAdc  
(BR)CES  
(I = –100 µAdc, V  
C BE  
= 0)  
Collector Cutoff Current  
(V = –30 Vdc, I = 0)  
I
–100  
–100  
CBO  
CB  
Emitter Cutoff Current  
(V = –10 Vdc, I = 0)  
E
I
EBO  
EB  
C
Preferred devices are Motorola recommended choices for future use and best overall value.  
2–710  
Motorola Small–Signal Transistors, FETs and Diodes Device Data  

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