Datasheet > MPSW92_10

MPSW92_10

更新时间： 2024-09-18 12:33:47

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管高压
页数	文件大小	规格书
4页	104K
描述
One Watt High Voltage Transistor

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中文翻译

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数据手册

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MPSW92_10 数据手册

MPSW92

One Watt High Voltage

Transistor

PNP Silicon

http://onsemi.com

Features

• Pb−Free Packages are Available*

COLLECTOR

MAXIMUM RATINGS

Rating

Symbol

Value

−300

−5.0

Unit

Vdc

BASE

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

CEO

CBO

EBO

Vdc

EMITTER

Collector Current − Continuous

−500

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.0

8.0

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

2.5

mW/°C

TO−92 1 WATT

(TO−226)

CASE 29−10

STYLE 1

Operating and Storage Junction

Temperature Range

T , T

−55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

STRAIGHT LEAD

BULK PACK

BENT LEAD

TAPE & REEL

AMMO PACK

Thermal Resistance,

Junction−to−Ambient

125

°C/W

Thermal Resistance, Junction to Case

°C/W

MARKING DIAGRAM

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

MPS

W92

YWWG

MPSW45x = Device Code

x = 45A Devices

= Assembly Location

= Year

= Work Week

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Publication Order Number:

August, 2010 − Rev. 5

MPSW92/D

12 3 4

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MPSW92-18	TI	获取价格	300V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3
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