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MPSW56RLRPG PDF预览

MPSW56RLRPG

更新时间: 2024-11-26 10:48:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器小信号双极晶体管
页数 文件大小 规格书
4页 93K
描述
One Watt Amplifier Transistors

MPSW56RLRPG 技术参数

是否无铅: 不含铅生命周期:End Of Life
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
Factory Lead Time:1 week风险等级:5.29
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):50
JEDEC-95代码:TO-226JESD-30 代码:O-PBCY-T3
JESD-609代码:e1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
Base Number Matches:1

MPSW56RLRPG 数据手册

 浏览型号MPSW56RLRPG的Datasheet PDF文件第2页浏览型号MPSW56RLRPG的Datasheet PDF文件第3页浏览型号MPSW56RLRPG的Datasheet PDF文件第4页 
MPSW55, MPSW56  
One Watt Amplifier  
Transistors  
PNP Silicon  
http://onsemi.com  
Features  
PbFree Packages are Available*  
COLLECTOR  
3
2
MAXIMUM RATINGS  
BASE  
Rating  
Symbol  
Value  
Unit  
1
EMITTER  
CollectorEmitter Voltage  
MPSW55  
MPSW56  
V
CEO  
V
CBO  
V
EBO  
60  
80  
Vdc  
CollectorBase Voltage  
MPSW55  
MPSW56  
60  
80  
Vdc  
EmitterBase Voltage  
4.0  
Vdc  
Collector Current Continuous  
I
500  
mAdc  
TO92 1 WATT  
(TO226)  
CASE 2910  
STYLE 1  
C
Total Device Dissipation @ T = 25°C  
P
1.0  
8.0  
W
mW/°C  
A
D
1
2
3
BENT LEAD  
TAPE & REEL  
AMMO PACK  
Derate above 25°C  
1
2
3
Total Device Dissipation @ T = 25°C  
P
2.5  
20  
W
mW/°C  
C
D
STRAIGHT LEAD  
BULK PACK  
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
MARKING DIAGRAM  
THERMAL CHARACTERISTICS  
Characteristic  
MPS  
W5x  
Symbol  
Max  
125  
50  
Unit  
°C/W  
°C/W  
AYWWG  
Thermal Resistance, JunctiontoAmbient  
Thermal Resistance, JunctiontoCase  
R
q
JA  
G
R
q
JC  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
x
A
Y
= 5 or 6  
= Assembly Location  
= Year  
WW = Work Week  
G
= PbFree Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MPSW55G  
TO92  
(PbFree)  
5000 Units/Bulk  
MPSW55RLRAG  
TO92  
(PbFree)  
2000/Tape & Reel  
MPSW56RLRP  
TO92  
2000/Ammo Pack  
2000/Ammo Pack  
MPSW56RLRPG  
TO92  
(PbFree)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
August, 2010 Rev. 4  
MPSW55/D  

MPSW56RLRPG 替代型号

型号 品牌 替代类型 描述 数据表
MPSW56RLRA ONSEMI

类似代替

暂无描述
MPSW56RLRAG ONSEMI

类似代替

1.0 W PNP Bipolar Transistor, TO-92 (TO-226) 1 WATT, 2000-REEL
KST56MTF FAIRCHILD

功能相似

PNP Epitaxial Silicon Transistor, 3LD, SOT23, JEDEC TO-236, LOW PROFILE, 3000/TAPE REEL

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