5秒后页面跳转
MPSW56RLRAG PDF预览

MPSW56RLRAG

更新时间: 2024-11-26 13:11:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器晶体管
页数 文件大小 规格书
4页 93K
描述
1.0 W PNP Bipolar Transistor, TO-92 (TO-226) 1 WATT, 2000-REEL

MPSW56RLRAG 技术参数

是否无铅:不含铅生命周期:End Of Life
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
Factory Lead Time:1 week风险等级:5.27
Is Samacsys:N最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):50JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzBase Number Matches:1

MPSW56RLRAG 数据手册

 浏览型号MPSW56RLRAG的Datasheet PDF文件第2页浏览型号MPSW56RLRAG的Datasheet PDF文件第3页浏览型号MPSW56RLRAG的Datasheet PDF文件第4页 
MPSW55, MPSW56  
One Watt Amplifier  
Transistors  
PNP Silicon  
http://onsemi.com  
Features  
PbFree Packages are Available*  
COLLECTOR  
3
2
MAXIMUM RATINGS  
BASE  
Rating  
Symbol  
Value  
Unit  
1
EMITTER  
CollectorEmitter Voltage  
MPSW55  
MPSW56  
V
CEO  
V
CBO  
V
EBO  
60  
80  
Vdc  
CollectorBase Voltage  
MPSW55  
MPSW56  
60  
80  
Vdc  
EmitterBase Voltage  
4.0  
Vdc  
Collector Current Continuous  
I
500  
mAdc  
TO92 1 WATT  
(TO226)  
CASE 2910  
STYLE 1  
C
Total Device Dissipation @ T = 25°C  
P
1.0  
8.0  
W
mW/°C  
A
D
1
2
3
BENT LEAD  
TAPE & REEL  
AMMO PACK  
Derate above 25°C  
1
2
3
Total Device Dissipation @ T = 25°C  
P
2.5  
20  
W
mW/°C  
C
D
STRAIGHT LEAD  
BULK PACK  
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
MARKING DIAGRAM  
THERMAL CHARACTERISTICS  
Characteristic  
MPS  
W5x  
Symbol  
Max  
125  
50  
Unit  
°C/W  
°C/W  
AYWWG  
Thermal Resistance, JunctiontoAmbient  
Thermal Resistance, JunctiontoCase  
R
q
JA  
G
R
q
JC  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
x
A
Y
= 5 or 6  
= Assembly Location  
= Year  
WW = Work Week  
G
= PbFree Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MPSW55G  
TO92  
(PbFree)  
5000 Units/Bulk  
MPSW55RLRAG  
TO92  
(PbFree)  
2000/Tape & Reel  
MPSW56RLRP  
TO92  
2000/Ammo Pack  
2000/Ammo Pack  
MPSW56RLRPG  
TO92  
(PbFree)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
August, 2010 Rev. 4  
MPSW55/D  

MPSW56RLRAG 替代型号

型号 品牌 替代类型 描述 数据表
MPSW56RLRA ONSEMI

类似代替

暂无描述
MPSW56RLRPG ONSEMI

类似代替

One Watt Amplifier Transistors
MPSA56RA FAIRCHILD

功能相似

Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,

与MPSW56RLRAG相关器件

型号 品牌 获取价格 描述 数据表
MPSW56RLRE ONSEMI

获取价格

500mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-10, TO-226AE, 3 PIN
MPSW56RLRF MOTOROLA

获取价格

500mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSW56RLRP ONSEMI

获取价格

One Watt Amplifier Transistors
MPSW56RLRP MOTOROLA

获取价格

500mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSW56RLRPG ONSEMI

获取价格

One Watt Amplifier Transistors
MPSW56ZL1 MOTOROLA

获取价格

500mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSW63 MOTOROLA

获取价格

One Watt Darlington Transistors
MPSW63 ONSEMI

获取价格

One Watt Darlington Transistors(PNP Silicon)
MPSW63_06 ONSEMI

获取价格

One Watt Darlington Transistors PNP Silicon
MPSW63G ONSEMI

获取价格

One Watt Darlington Transistors