Datasheet > MPSW63_06

MPSW63_06

更新时间： 2024-11-26 04:14:47

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管达林顿晶体管
页数	文件大小	规格书
4页	100K
描述
One Watt Darlington Transistors PNP Silicon

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MPSW63_06 数据手册

ON Semiconductort

MPSW63

MPSW64

One Watt Darlington

Transistors

PNP Silicon

*ON Semiconductor Preferred Device

w These devices are available in Pb−free package(s). Specifications herein

apply to both standard and Pb−free devices. Please see our website at

www.onsemi.com for specific Pb−free orderable part numbers, or

contact your local ON Semiconductor sales office or representative.

MAXIMUM RATINGS

MPSW63

MPSW64

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol

Unit

Vdc

−30

CES

CBO

EBO

CASE 29−10, STYLE 1

TO−92 (TO−226AE)

−30

Vdc

−10

Vdc

Collector Current — Continuous

−500

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.0

8.0

Watt

mW/°C

COLLECTOR 3

Total Device Dissipation @ T = 25°C

Derate above 25°C

2.5

Watts

mW/°C

BASE

Operating and Storage Junction

Temperature Range

T , T

−55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

125

Unit

°C/W

EMITTER 1

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Max

Unit

Collector−Emitter Breakdown Voltage

−30

—

Vdc

nAdc

(BR)CES

(I = −100 μAdc, V = 0)

Collector Cutoff Current

(V = −30 Vdc, I = 0)

−100

CBO

Emitter Cutoff Current

(V = −10 Vdc, I = 0)

—

EBO

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Publication Order Number:

March, 2006 − Rev. 3

MPSW63/D

12 3 4

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