5秒后页面跳转
MPSW63RLRAG PDF预览

MPSW63RLRAG

更新时间: 2024-09-19 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 小信号双极晶体管
页数 文件大小 规格书
4页 157K
描述
小信号达林顿 PNP

MPSW63RLRAG 技术参数

是否无铅: 不含铅生命周期:End Of Life
零件包装代码:TO-92包装说明:PLASTIC, TO-226AE, 3 PIN
针数:3Reach Compliance Code:unknown
HTS代码:8541.29.00.75风险等级:5.19
最大集电极电流 (IC):0.5 A配置:DARLINGTON
最小直流电流增益 (hFE):10000JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICON标称过渡频率 (fT):125 MHz
Base Number Matches:1

MPSW63RLRAG 数据手册

 浏览型号MPSW63RLRAG的Datasheet PDF文件第2页浏览型号MPSW63RLRAG的Datasheet PDF文件第3页浏览型号MPSW63RLRAG的Datasheet PDF文件第4页 
Order this document  
by MPSW63/D  
SEMICONDUCTOR TECHNICAL DATA  
PNP Silicon  
COLLECTOR 3  
*Motorola Preferred Device  
BASE  
2
EMITTER 1  
MAXIMUM RATINGS  
1
2
3
MPSW63  
MPSW64  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Unit  
Vdc  
V
CES  
–30  
–30  
CASE 29–05, STYLE 1  
TO–92 (TO–226AE)  
V
Vdc  
CBO  
EBO  
V
–10  
Vdc  
Collector Current — Continuous  
I
C
–500  
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.0  
8.0  
Watt  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
2.5  
20  
Watts  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
125  
50  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Max  
Unit  
CollectorEmitter Breakdown Voltage  
V
–30  
Vdc  
nAdc  
nAdc  
(BR)CES  
(I = –100 µAdc, V  
C BE  
= 0)  
Collector Cutoff Current  
(V = –30 Vdc, I = 0)  
I
–100  
–100  
CBO  
CB  
Emitter Cutoff Current  
(V = –10 Vdc, I = 0)  
E
I
EBO  
EB  
C
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1996  

MPSW63RLRAG 替代型号

型号 品牌 替代类型 描述 数据表
2N5769 CENTRAL

功能相似

Small Signal Transistors TO-92 Case (Continued)

与MPSW63RLRAG相关器件

型号 品牌 获取价格 描述 数据表
MPSW63RLRB MOTOROLA

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, PNP, Silicon, TO-92
MPSW63RLRE MOTOROLA

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, PNP, Silicon, TO-92
MPSW63RLRE ONSEMI

获取价格

TRANSISTOR 500 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AE, 3 PIN, BIP
MPSW63RLRF MOTOROLA

获取价格

500mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSW63RLRM MOTOROLA

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, PNP, Silicon, TO-92
MPSW63RLRP MOTOROLA

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, PNP, Silicon, TO-92
MPSW63ZL1 MOTOROLA

获取价格

500mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSW64 ONSEMI

获取价格

One Watt Darlington Transistors(PNP Silicon)
MPSW64 MOTOROLA

获取价格

One Watt Darlington Transistors
MPSW64-18 TI

获取价格

30V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3