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MPSW63RLRA PDF预览

MPSW63RLRA

更新时间: 2024-11-26 20:11:19
品牌 Logo 应用领域
安森美 - ONSEMI 晶体管
页数 文件大小 规格书
4页 102K
描述
500mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AE, 3 PIN

MPSW63RLRA 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:PLASTIC, TO-226AE, 3 PIN
针数:3Reach Compliance Code:not_compliant
HTS代码:8541.29.00.75风险等级:5.19
最大集电极电流 (IC):0.5 A配置:DARLINGTON
最小直流电流增益 (hFE):10000JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):240极性/信道类型:PNP
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
晶体管元件材料:SILICON标称过渡频率 (fT):125 MHz
Base Number Matches:1

MPSW63RLRA 数据手册

 浏览型号MPSW63RLRA的Datasheet PDF文件第2页浏览型号MPSW63RLRA的Datasheet PDF文件第3页浏览型号MPSW63RLRA的Datasheet PDF文件第4页 
ON Semiconductort  
MPSW63  
MPSW64  
One Watt Darlington  
Transistors  
PNP Silicon  
*
*ON Semiconductor Preferred Device  
w These devices are available in Pbfree package(s). Specifications herein  
apply to both standard and Pbfree devices. Please see our website at  
www.onsemi.com for specific Pbfree orderable part numbers, or  
contact your local ON Semiconductor sales office or representative.  
MAXIMUM RATINGS  
1
2
3
MPSW63  
MPSW64  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Unit  
Vdc  
V
30  
CES  
CBO  
EBO  
CASE 2910, STYLE 1  
TO92 (TO226AE)  
V
V
30  
Vdc  
10  
Vdc  
Collector Current — Continuous  
I
C
500  
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.0  
8.0  
Watt  
mW/°C  
A
COLLECTOR 3  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
2.5  
20  
Watts  
mW/°C  
C
BASE  
2
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
125  
50  
Unit  
°C/W  
°C/W  
EMITTER 1  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
q
JA  
R
q
JC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Max  
Unit  
CollectorEmitter Breakdown Voltage  
V
30  
Vdc  
nAdc  
nAdc  
(BR)CES  
(I = 100 μAdc, V = 0)  
C
BE  
Collector Cutoff Current  
(V = 30 Vdc, I = 0)  
I
100  
100  
CBO  
CB  
E
Emitter Cutoff Current  
(V = 10 Vdc, I = 0)  
I
EBO  
EB  
C
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
March, 2006 Rev. 3  
MPSW63/D  

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