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MPS651G PDF预览

MPS651G

更新时间: 2024-11-08 04:14:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器小信号双极晶体管
页数 文件大小 规格书
6页 104K
描述
Amplifier Transistors

MPS651G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:LEAD FREE, CASE 29-11, TO-226, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95Factory Lead Time:1 week
风险等级:5.43Is Samacsys:N
最大集电极电流 (IC):2 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.625 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):75 MHz
Base Number Matches:1

MPS651G 数据手册

 浏览型号MPS651G的Datasheet PDF文件第2页浏览型号MPS651G的Datasheet PDF文件第3页浏览型号MPS651G的Datasheet PDF文件第4页浏览型号MPS651G的Datasheet PDF文件第5页浏览型号MPS651G的Datasheet PDF文件第6页 
MPS650, MPS651, NPN  
MPS750, MPS751, PNP  
MPS651 and MPS751 are Preferred Devices  
Amplifier Transistors  
Features  
PbFree Packages are Available*  
http://onsemi.com  
MAXIMUM RATINGS  
MPS650 MPS651  
COLLECTOR  
COLLECTOR  
MPS750 MPS751  
Rating  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
3
3
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
V
V
V
40  
60  
60  
80  
CE  
CB  
EB  
2
2
BASE  
BASE  
5.0  
2.0  
Collector Current Continuous  
Total Power Dissipation @  
I
C
1
1
EMITTER  
P
P
EMITTER  
D
D
T = 25°C  
625  
5.0  
mW  
mW/°C  
A
NPN  
PNP  
Derate above 25°C  
Total Power Dissipation @  
T
= 25°C  
1.5  
12  
W
mW/°C  
C
Derate above 25°C  
MARKING  
DIAGRAM  
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
MPS  
xxx  
AYWW  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
TO92  
CASE 2911  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance,  
JunctiontoAmbient  
R
q
JA  
200  
°C/W  
xxx  
A
Y
= Specific Device Code  
= Assembly Location  
= Year  
Thermal Resistance,  
JunctiontoCase  
R
q
JC  
83.3  
°C/W  
WW  
= Work Week  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
May, 2005 Rev. 2  
MPS650/D  

MPS651G 替代型号

型号 品牌 替代类型 描述 数据表
MPS651RLRAG ONSEMI

完全替代

Amplifier Transistors
MPS651RLRA ONSEMI

完全替代

Amplifier Transistors
MPS651 ONSEMI

完全替代

Amplifier Transistors

与MPS651G相关器件

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MPS651LEADFREE CENTRAL

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Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO
MPS651NPN CDIL

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NPN/PNP SILICON PLANAR AMPLIFIER TRANSISTORS
MPS651RL ONSEMI

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2000mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN
MPS651RL1 ONSEMI

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2000mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN
MPS651RLRA ONSEMI

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Amplifier Transistors
MPS651RLRA MOTOROLA

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2000mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS651RLRAG ONSEMI

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Amplifier Transistors
MPS651RLRB MOTOROLA

获取价格

2000mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS651RLRBG ONSEMI

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Amplifier Transistors
MPS651RLRE ONSEMI

获取价格

TRANSISTOR 2000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PI