MPS651RLRP

更新时间： 2024-11-08 13:11:51

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摩托罗拉 - MOTOROLA		晶体放大器晶体管
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数据手册

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MPS651RLRP 数据手册

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by MPS650/D

SEMICONDUCTOR TECHNICAL DATA

COLLECTOR

BASE

NPN

PNP

Voltage and current are

negative for PNP transistors

EMITTER

*Motorola Preferred Devices

MAXIMUM RATINGS

MPS650

MPS651

MPS750

MPS751

Rating

Symbol

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

5.0

2.0

Collector Current — Continuous

Total Power Dissipation @ T = 25°C

Derate above 25°C

625

5.0

mW/°C

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

Total Power Dissipation @ T = 25°C

Derate above 25°C

1.5

Watt

mW/°C

Operating and Storage Junction

Temperature Range

T , T

J stg

–55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

200

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

83.3

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

(1)

Collector–Emitter Breakdown Voltage

Vdc

(BR)CEO

(I = 10 mAdc, I = 0)

MPS650, MPS750

MPS651, MPS751

—

Collector–Base Breakdown Voltage

(I = 100 µAdc, I = 0 )

Vdc

(BR)CBO

MPS650, MPS750

MPS651, MPS751

—

Emitter–Base Breakdown Voltage

(I = 0, I = 10 µAdc)

5.0

—

Vdc

(BR)EBO

Collector Cutoff Current

µAdc

CBO

= 60 Vdc, I = 0)

MPS650, MPS750

MPS651, MPS751

—

0.1

= 80 Vdc, I = 0)

Emitter Cutoff Current

(V = 4.0 V, I = 0)

—

0.1

µAdc

EBO

1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle = 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

12 3 4

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