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MPS651RL1 PDF预览

MPS651RL1

更新时间: 2024-11-11 05:11:27
品牌 Logo 应用领域
安森美 - ONSEMI 放大器晶体管
页数 文件大小 规格书
34页 342K
描述
2000mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN

MPS651RL1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.1其他特性:EUROPEAN PART NUMBER
最大集电极电流 (IC):2 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):75 MHz

MPS651RL1 数据手册

 浏览型号MPS651RL1的Datasheet PDF文件第2页浏览型号MPS651RL1的Datasheet PDF文件第3页浏览型号MPS651RL1的Datasheet PDF文件第4页浏览型号MPS651RL1的Datasheet PDF文件第5页浏览型号MPS651RL1的Datasheet PDF文件第6页浏览型号MPS651RL1的Datasheet PDF文件第7页 
SEMICONDUCTOR TECHNICAL DATA  
COLLECTOR  
3
COLLECTOR  
3
2
2
BASE  
BASE  
NPN  
PNP  
Voltage and current are  
1
1
negative for PNP transistors  
EMITTER  
EMITTER  
*Motorola Preferred Devices  
MAXIMUM RATINGS  
MPS650  
MPS651  
MPS750  
MPS751  
Rating  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
V
CE  
V
CB  
V
EB  
40  
60  
60  
80  
5.0  
2.0  
1
2
3
Collector Current — Continuous  
I
C
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
CASE 29–04, STYLE 1  
TO–92 (TO–226AA)  
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watt  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
55 to +150  
°C  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
200  
JA  
JC  
83.3  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
(1)  
CollectorEmitter Breakdown Voltage  
V
Vdc  
(BR)CEO  
(I = 10 mAdc, I = 0)  
MPS650, MPS750  
MPS651, MPS751  
40  
60  
C
B
CollectorBase Breakdown Voltage  
(I = 100 µAdc, I = 0 )  
V
Vdc  
(BR)CBO  
MPS650, MPS750  
MPS651, MPS751  
60  
80  
C
E
EmitterBase Breakdown Voltage  
(I = 0, I = 10 µAdc)  
V
5.0  
Vdc  
(BR)EBO  
C
E
Collector Cutoff Current  
I
µAdc  
CBO  
(V  
CB  
(V  
CB  
= 60 Vdc, I = 0)  
MPS650, MPS750  
MPS651, MPS751  
0.1  
0.1  
E
= 80 Vdc, I = 0)  
E
Emitter Cutoff Current  
(V = 4.0 V, I = 0)  
I
0.1  
µAdc  
EBO  
EB  
C
1. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0%.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola Small–Signal Transistors, FETs and Diodes Device Data  
2–529  

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