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MPS6520 PDF预览

MPS6520

更新时间: 2024-11-09 22:46:03
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摩托罗拉 - MOTOROLA 晶体放大器晶体管
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描述
Amplifier Transistors

MPS6520 数据手册

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Order this document  
by MPS6520/D  
SEMICONDUCTOR TECHNICAL DATA  
COLLECTOR 3  
2
BASE  
1 EMITTER  
COLLECTOR 3  
Voltage and current are negative  
for PNP transistors  
2
BASE  
*Motorola Preferred Device  
1 EMITTER  
MAXIMUM RATINGS  
Rating  
Symbol  
NPN  
PNP  
Unit  
CollectorEmitter Voltage  
V
V
V
Vdc  
CEO  
CBO  
EBO  
MPS6520, MPS6521  
MPS6523  
25  
25  
CollectorBase Voltage  
Vdc  
1
2
3
MPS6520, MPS6521  
MPS6523  
40  
25  
EmitterBase Voltage  
Collector Current — Continuous  
4.0  
Vdc  
CASE 29–04, STYLE 1  
TO–92 (TO–226AA)  
I
C
100  
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watts  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
55 to +150  
°C  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Ambient  
(Printed Circuit Board Mounting)  
R
200  
°C/W  
JA  
JC  
Thermal Resistance, Junction to Case  
R
83.3  
°C/W  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Max  
Unit  
CollectorEmitter Breakdown Voltage  
V
25  
Vdc  
Vdc  
Adc  
(BR)CEO  
(I = 0.5 mAdc, I = 0)  
C
B
EmitterBase Breakdown Voltage  
(I = 10 Adc, I = 0)  
V
4.0  
(BR)EBO  
E
C
Collector Cutoff Current  
I
CBO  
(V  
CB  
(V  
CB  
= 30 Vdc, I = 0)  
MPS6520, MPS6521  
MPS6523  
0.05  
0.05  
E
= 20 Vdc, I = 0)  
E
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1996

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