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MPS6521 PDF预览

MPS6521

更新时间: 2024-09-21 04:14:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体放大器小信号双极晶体管
页数 文件大小 规格书
3页 27K
描述
NPN General Purpose Amplifier

MPS6521 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:TO-92, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.09
Samacsys Confidence:Samacsys Status:Released
Samacsys PartID:582350Samacsys Pin Count:3
Samacsys Part Category:Transistor BJT NPNSamacsys Package Category:Other
Samacsys Footprint Name:TO127P254X732-3Samacsys Released Date:2017-01-11 16:35:06
Is Samacsys:N最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:25 V配置:SINGLE
最小直流电流增益 (hFE):300JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-W3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:NPN
最大功率耗散 (Abs):0.625 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

MPS6521 数据手册

 浏览型号MPS6521的Datasheet PDF文件第2页浏览型号MPS6521的Datasheet PDF文件第3页 
MPS6521  
NPN General Purpose Amplifier  
This device is deisgned for general purpose amplifier applications at  
collector to 300mA.  
Sourced from process 10.  
TO-92  
1. Emitter 2. Base 3. Collector  
1
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
25  
Units  
V
V
V
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
CEO  
40  
V
CBO  
EBO  
4.0  
V
I
- Continuous  
100  
mA  
°C  
C
T , T  
Operating and Storage Junction Temperature Range  
- 55 ~ 150  
J
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
Off Characteristics  
V
V
Collector-Emitter Sustaining Voltage *  
Emitter-Base Breakdown Voltage  
Emitter Cutoff Current  
I
I
= 500µA, I = 0  
25  
4
V
V
(BR)CEO  
(BR)EBO  
CBO  
C
E
B
= 10µA, I = 0  
C
I
V
= 30V, I = 0  
50  
nA  
CB  
E
On Characteristics  
h
DC Current Gain  
V
V
= 10V, I = 100µA  
150  
300  
FE  
CE  
CE  
C
= 10V, I = 2.0mA  
600  
0.5  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
I
= 50mA, I = 5.0mA  
V
CE  
C
B
* Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%  
Thermal Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Max.  
Units  
mW  
mW/°C  
P
Total Device Dissipation  
625  
5
D
Derate above 25°C  
R
R
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
83.3  
200  
°C/W  
θJC  
θJA  
°C/W  
©2003 Fairchild Semiconductor Corporation  
Rev. A, November 2003  

MPS6521 替代型号

型号 品牌 替代类型 描述 数据表
MPS6521 ONSEMI

完全替代

Amplifier Transistors
ZTX453 DIODES

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与MPS6521相关器件

型号 品牌 获取价格 描述 数据表
MPS6521/D10Z TI

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100mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6521/D10Z(OPTION18) TI

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Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
MPS6521/D10Z(OPTION5) TI

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Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
MPS6521/D11Z(OPTION5) TI

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Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
MPS6521/D11Z{OPTION18} TI

获取价格

100mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6521/D11Z{OPTION5} TI

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100mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6521/D26Z NSC

获取价格

100mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6521/D26Z(OPTION18) NSC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
MPS6521/D26Z(OPTION5) NSC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
MPS6521/D26Z{OPTION18} NSC

获取价格

100mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92