5秒后页面跳转
MPS6521 PDF预览

MPS6521

更新时间: 2024-12-01 04:14:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体放大器小信号双极晶体管
页数 文件大小 规格书
3页 27K
描述
NPN General Purpose Amplifier

MPS6521 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:TO-92, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.09
Samacsys Confidence:Samacsys Status:Released
Samacsys PartID:582350Samacsys Pin Count:3
Samacsys Part Category:Transistor BJT NPNSamacsys Package Category:Other
Samacsys Footprint Name:TO127P254X732-3Samacsys Released Date:2017-01-11 16:35:06
Is Samacsys:N最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:25 V配置:SINGLE
最小直流电流增益 (hFE):300JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-W3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:NPN
最大功率耗散 (Abs):0.625 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

MPS6521 数据手册

 浏览型号MPS6521的Datasheet PDF文件第2页浏览型号MPS6521的Datasheet PDF文件第3页 
MPS6521  
NPN General Purpose Amplifier  
This device is deisgned for general purpose amplifier applications at  
collector to 300mA.  
Sourced from process 10.  
TO-92  
1. Emitter 2. Base 3. Collector  
1
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
25  
Units  
V
V
V
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
CEO  
40  
V
CBO  
EBO  
4.0  
V
I
- Continuous  
100  
mA  
°C  
C
T , T  
Operating and Storage Junction Temperature Range  
- 55 ~ 150  
J
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
Off Characteristics  
V
V
Collector-Emitter Sustaining Voltage *  
Emitter-Base Breakdown Voltage  
Emitter Cutoff Current  
I
I
= 500µA, I = 0  
25  
4
V
V
(BR)CEO  
(BR)EBO  
CBO  
C
E
B
= 10µA, I = 0  
C
I
V
= 30V, I = 0  
50  
nA  
CB  
E
On Characteristics  
h
DC Current Gain  
V
V
= 10V, I = 100µA  
150  
300  
FE  
CE  
CE  
C
= 10V, I = 2.0mA  
600  
0.5  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
I
= 50mA, I = 5.0mA  
V
CE  
C
B
* Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%  
Thermal Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Max.  
Units  
mW  
mW/°C  
P
Total Device Dissipation  
625  
5
D
Derate above 25°C  
R
R
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
83.3  
200  
°C/W  
θJC  
θJA  
°C/W  
©2003 Fairchild Semiconductor Corporation  
Rev. A, November 2003  

MPS6521 替代型号

型号 品牌 替代类型 描述 数据表
MPS6521 ONSEMI

完全替代

Amplifier Transistors
ZTX453 DIODES

功能相似

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS
MPSA18RLRAG ONSEMI

功能相似

Low Noise Transistor NPN Silicon

与MPS6521相关器件

型号 品牌 获取价格 描述 数据表
MPS6521/D10Z TI

获取价格

100mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6521/D10Z(OPTION18) TI

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
MPS6521/D10Z(OPTION5) TI

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
MPS6521/D11Z(OPTION5) TI

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
MPS6521/D11Z{OPTION18} TI

获取价格

100mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6521/D11Z{OPTION5} TI

获取价格

100mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6521/D26Z NSC

获取价格

100mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6521/D26Z(OPTION18) NSC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
MPS6521/D26Z(OPTION5) NSC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
MPS6521/D26Z{OPTION18} NSC

获取价格

100mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92