Datasheet > MPS651NPN

MPS651NPN

更新时间： 2024-11-11 01:22:27

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页数	文件大小	规格书
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描述
NPN/PNP SILICON PLANAR AMPLIFIER TRANSISTORS

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数据手册

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MPS651NPN 数据手册

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

NPN/PNP SILICON PLANAR AMPLIFIER TRANSISTORS

MPS650 , MPS651 (NPN)

MPS750 , MPS751 (PNP)

TO -92

CBE

AMPLIFIER TRANSISTORS

ABSOLUTE MAXIMUM RATINGS.

DESCRIPTION

SYMBOL

MPS650 MPS651

MPS750 MPS751

UNITS

Collector -Emitter Voltage

Collector -Base Voltage

Emitter -Base Voltage

Collector Current Continuous

Power Dissipation @Ta=25 degC

Derate Above 25deg C

Power Dissipation @Tc=25 degC

Derate Above 25deg C

VCEO

VCBO

VEBO

5.0

2.0

625

5.0

1.5

12.0

mW/deg C

deg C

-55 to +150

Operating And Storage Junction

Temperature Range

Tj, Tstg

THERMAL RESISTANCE

Junction to Case

Junction to Ambient

83.3

200

Rth(j-c)

Rth(j-a)

deg C/W

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION

MPS650 MPS651

MPS750 MPS751

UNITS

Collector -Emitter Voltage

Collector -Base Voltage

Emitter -Base Voltage

VCEO*

VCBO

VEBO

ICBO

IC=10mA,IB=0

IC=100uA, IE=0

IE=10uA, IC=0

VCB=60V, IE=0

VCB=80V, IE=0

VEB=4V, IC=0

IC=50mA, VCE=2V

IC=500mA, VCE=2V

IC=1A, VCE=2V

IC=2A, VCE=2V

>40

>60

>5.0

<100

>75

>60

>80

>5.0

<100

>75

>40

Collector-Cut off Current

Emitter-Cut off Current

DC Current Gain

IEBO

hFE*

>75

>40

Collector Emitter Saturation Voltage VCE(Sat)* IC=2A, IB=200mA

<0.50

<0.30

<1.0

<1.2

>75

<0.50

<0.30

<1.0

<1.2

>75

MHz

IC=1A, IB=100mA

Base Emitter on Voltage

Base Emitter Saturation Voltage

Current Gain-Bandwidth Product

VBE(on)* IC=1A, VCE=2V

VBE(Sat)* IC=1A, IB=100mA

ft**

IC=50mA, VCE=5V

f=100MHz

*Pulse Condition : Length =300us, Duty Cycle=2%

**ft is defined as the frequency at which /hfe/ extrapolates to unity

Continental Device India Limited

Page 1 of 3

Data Sheet

12 3

中文翻译

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