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MMUN2233LT3 PDF预览

MMUN2233LT3

更新时间： 2023-01-02 18:21:49
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体管
页数 文件大小 规格书
12页 181K
描述
100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, TO-236AB, 3 PIN

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MMUN2233LT3 技术参数

是否Rohs认证： 不符合生命周期：Transferred
包装说明：SMALL OUTLINE, R-PDSO-G3Reach Compliance Code：unknown
风险等级：5.83其他特性：BUILT-IN BIAS RESISTOR RATIO IS 10
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：80
JEDEC-95代码：TO-236ABJESD-30 代码：R-PDSO-G3
JESD-609代码：e0元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：NPN
功耗环境最大值：0.2 W最大功率耗散 (Abs)：0.2 W
认证状态：Not Qualified子类别：BIP General Purpose Small Signal
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
VCEsat-Max：0.25 VBase Number Matches：1

MMUN2233LT3 数据手册

 浏览型号MMUN2233LT3的Datasheet PDF文件第2页浏览型号MMUN2233LT3的Datasheet PDF文件第3页浏览型号MMUN2233LT3的Datasheet PDF文件第4页浏览型号MMUN2233LT3的Datasheet PDF文件第5页浏览型号MMUN2233LT3的Datasheet PDF文件第6页浏览型号MMUN2233LT3的Datasheet PDF文件第7页 
Order this document  
by MMUN2211LT1/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon Surface Mount Transistor with  
Monolithic Bias Resistor Network  
Motorola Preferred Devices  
This new series of digital transistors is designed to replace a single device and its  
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single  
transistor with a monolithic bias network consisting of two resistors; a series base  
resistor and a base-emitter resistor. The BRT eliminates these individual components  
by integrating them into a single device. The use of a BRT can reduce both system  
cost and board space. The device is housed in the SOT-23 package which is  
designed for low power surface mount applications.  
NPN SILICON  
BIAS RESISTOR  
TRANSISTOR  
•
•
•
•
Simplifies Circuit Design  
Reduces Board Space  
PIN 3  
COLLECTOR  
(OUTPUT)  
Reduces Component Count  
3
The SOT-23 package can be soldered using wave or  
reflow. The modified gull-winged leads absorb thermal  
stress during soldering eliminating the possibility of  
damage to the die.  
R1  
R2  
1
PIN 1  
BASE  
(INPUT)  
2
•
Available in 8 mm embossed tape and reel. Use the  
Device Number to order the 7 inch/3000 unit reel.  
Replace “T1” with “T3” in the Device Number to order  
the13 inch/10,000 unit reel.  
PIN 2  
EMITTER  
(GROUND)  
CASE 318-08, STYLE 6  
SOT-23 (TO-236AB)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Collector-Base Voltage  
Symbol  
Value  
50  
Unit  
Vdc  
V
CBO  
CEO  
Collector-Emitter Voltage  
Collector Current  
V
50  
Vdc  
I
C
100  
mAdc  
(1)  
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
*200  
1.6  
mW  
mW/°C  
A
P
D
THERMAL CHARACTERISTICS  
Thermal Resistance — Junction-to-Ambient (surface mounted)  
Operating and Storage Temperature Range  
R
625  
°C/W  
°C  
θJA  
T , T  
J
–65 to +150  
stg  
Maximum Temperature for Soldering Purposes,  
Time in Solder Bath  
260  
10  
°C  
Sec  
T
L
DEVICE MARKING AND RESISTOR VALUES  
Device  
Marking  
R1 (K)  
R2 (K)  
MMUN2211LT1  
MMUN2212LT1  
MMUN2213LT1  
MMUN2214LT1  
MMUN2215LT1  
MMUN2216LT1  
MMUN2230LT1  
MMUN2231LT1  
MMUN2232LT1  
MMUN2233LT1  
MMUN2234LT1  
A8A  
A8B  
A8C  
A8D  
A8E  
A8F  
A8G  
A8H  
A8J  
A8K  
A8L  
10  
22  
47  
10  
10  
4.7  
1
2.2  
4.7  
4.7  
22  
10  
22  
47  
47  
∞
∞
1
2.2  
4.7  
47  
47  
(2)  
(2)  
(2)  
(2)  
(2)  
(2)  
(2)  
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.  
2. New devices. Updated curves to follow in subsequent data sheets.  
Thermal Clad is a trademark of the Bergquist Company  
Preferred devices are Motorola recommended choices for future use and best overall value.  
(Replaces MMUN2211T1/D)  
Motorola, Inc. 1996  
1234567...12

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