Datasheet > MMUN2233RLT1

MMUN2233RLT1

更新时间： 2024-11-23 22:14:43

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
8页	288K
描述
Bias Resistor Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MMUN2233RLT1 数据手册

LESHAN RADIO COMPANY, LTD.

Bias Resistor Transistor

PNP Silicon Surface Mount Transistor with

MMUN2211RLT1

MMUN2212RLT1

MMUN2213RLT1

MMUN2214RLT1

MMUN2215RLT1

MMUN2230RLT1

MMUN2231RLT1

MMUN2232RLT1

MMUN2233RL34

Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single device and its

external resistor bias network. The BRT (Bias Resistor Transistor) contains a single

transistor with a monolithic bias network consisting of two resistors; a series base

resistor and a base-emitter resistor.The BRT eliminates these individual components

by integrating them into a single device. The use of a BRT can reduce both system

cost and board space. The device is housed in the SOT-23 package which is

designed for low power surface mount applications.

Simplifies Circuit Design

Reduces Board Space

Reduces Component Count

The SOT-23 package can be soldered using wave or

reflow. The modified gull-winged leads absorb thermal

stress during soldering eliminating the possibility of

damage to the die.

Available in 8 mm embossed tape and reel. Use the

Device Number to order the 7 inch/3000 unit reel.

NPN SILICON

BIAS RESISTOR

TRANSISTOR

Replace “T1” with “T3” in the Device Number to order

the 13 inch/10,000 unit reel.

PIN3

Collector

PIN1

base

(output)

(Input)

PIN2

Emitter

(Ground)

CASE 318–08, STYLE 6

SOT– 23 (TO–236AB)

MAXIMUM RATINGS (T _A= 25°C unless otherwise noted)

Rating

Symbol

V_CBO

V _CEO

I_C

Value

Unit

Vdc

Collector-Base Voltage

Collector-Emitter Voltage

Vdc

Collector Current

Total Power Dissipation @ T _A= 25°C ⁽¹⁾

100

200

1.6

mAdc

P _D

Derate above 25°C

mW/°C

THERMAL CHARACTERISTICS

Rating

Symbol

R_θJA

Value

Unit

Thermal Resistance — Junction-to-Ambient (surface mounted)

Operating and Storage Temperature Range

Maximum Temperature for Soldering Purposes

Time in Solder Bath

625

°C/W

T_J, T_stg

–65 to +150

°C

260

T _L

Sec

DEVICE MARKING AND RESISTOR VALUES

Device

Marking

R1 (K)

R2 (K)

MMUN2211RLT1

A8A

MMUN2212RLT1

MMUN2213RLT1

MMUN2214RLT1

MMUN2215RLT1⁽²⁾

MMUN2216RLT1⁽²⁾

MMUN2230RLT1⁽²⁾

MMUN2231RLT1⁽²⁾

MMUN2232RLT1⁽²⁾

MMUN2233RLT1⁽²⁾

MMUN2234RLT1⁽²⁾

A8B

A8C

A8D

A8E

A8F

A8G

A8H

A8J

A8K

A8L

4.7

2.2

4.7

2.2

4.7

1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.

2. New devices. Updated curves to follow in subsequent data sheets.

Q2–1/8

12 3 4 5 6 7 8

中文翻译

下载PDF

与MMUN2233RLT1相关器件

型号	品牌	获取价格	描述	数据表
MMUN2234	WEITRON	获取价格	Bias Resistor Transistor NPN Silicon
MMUN2234L	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 22 k, R2 = 47 k
MMUN2234LT1	MOTOROLA	获取价格	NPN SILICON BIAS RESISTOR TRANSISTOR
MMUN2234LT1	LRC	获取价格	Bias Resistor Transistor
MMUN2234LT1	ONSEMI	获取价格	Bias Resistor Transistor
MMUN2234LT1G	ONSEMI	获取价格	Bias Resistor Transistor
MMUN2234LT3	ONSEMI	获取价格	Bias Resistor Transistor
MMUN2234LT3G	ONSEMI	获取价格	Bias Resistor Transistor
MMUN2235	WEITRON	获取价格	Bias Resistor Transistor NPN Silicon
MMUN2235L	ONSEMI	获取价格	NPN Transistors with Monolithic Bias Resistor Network

与MMUN2233RLT1相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

38
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

30
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

58
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

54

产品中心

服务支持

精选活动

关于我们

帮助中心

MMUN2233RLT1

MMUN2233RLT1 数据手册

与MMUN2233RLT1相关器件

与MMUN2233RLT1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MMUN2233RLT1

MMUN2233RLT1 数据手册

与MMUN2233RLT1相关器件

与MMUN2233RLT1相关文章

您还可以找

您在本页遇到什么问题？