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MMUN2233LT1 PDF预览

MMUN2233LT1

更新时间： 2024-11-23 22:35:23
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管
页数 文件大小 规格书
12页 108K
描述
Bias Resistor Transistor

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中文翻译

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MMUN2233LT1 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：SOT-23包装说明：SMALL OUTLINE, R-PDSO-G3
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：5.26其他特性：BUILT-IN BIAS RESISTOR RATIO IS 10
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：80
JEDEC-95代码：TO-236ABJESD-30 代码：R-PDSO-G3
JESD-609代码：e0湿度敏感等级：1
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：240
极性/信道类型：NPN最大功率耗散 (Abs)：0.2 W
认证状态：Not Qualified子类别：BIP General Purpose Small Signal
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

MMUN2233LT1 数据手册

 浏览型号MMUN2233LT1的Datasheet PDF文件第2页浏览型号MMUN2233LT1的Datasheet PDF文件第3页浏览型号MMUN2233LT1的Datasheet PDF文件第4页浏览型号MMUN2233LT1的Datasheet PDF文件第5页浏览型号MMUN2233LT1的Datasheet PDF文件第6页浏览型号MMUN2233LT1的Datasheet PDF文件第7页 
MMUN2211LT1 Series  
Preferred Devices  
Bias Resistor Transistor  
NPN Silicon Surface Mount Transistor  
with Monolithic Bias Resistor Network  
This new series of digital transistors is designed to replace a single  
device and its external resistor bias network. The BRT (Bias Resistor  
Transistor) contains a single transistor with a monolithic bias network  
consisting of two resistors; a series base resistor and a base-emitter  
resistor. The BRT eliminates these individual components by  
integrating them into a single device. The use of a BRT can reduce  
both system cost and board space. The device is housed in the SOT-23  
package which is designed for low power surface mount applications.  
http://onsemi.com  
PIN 3  
COLLECTOR  
(OUTPUT)  
R1  
R2  
PIN 1  
BASE  
PIN 2  
(INPUT)  
EMITTER  
(GROUND)  
• Simplifies Circuit Design  
• Reduces Board Space and Component Count  
• The SOT-23 package can be soldered using wave or reflow. The  
modified gull-winged leads absorb thermal stress during soldering  
eliminating the possibility of damage to the die.  
MARKING DIAGRAM  
3
3
• Available in 8 mm embossed tape and reel. Use the Device  
Number to order the 7 inch/3000 unit reel. Replace “T1” with  
“T3” in the Device Number to order the13 inch/10,000 unit reel.  
1
A8x  
2
1
2
SOT−23  
CASE 318  
STYLE 6  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A8x = Device Code  
= (See Table)  
A
x
Rating  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
Symbol  
Value  
50  
Unit  
Vdc  
V
CBO  
CEO  
ORDERING INFORMATION  
V
50  
Vdc  
†
Device  
Package  
SOT−23  
SOT−23  
SOT−23  
SOT−23  
SOT−23  
SOT−23  
SOT−23  
SOT−23  
SOT−23  
SOT−23  
SOT−23  
SOT−23  
SOT−23  
Shipping  
I
C
100  
mAdc  
MMUN2211LT1  
MMUN2212LT1  
MMUN2213LT1  
MMUN2214LT1  
MMUN2215LT1  
MMUN2216LT1  
MMUN2230LT1  
MMUN2231LT1  
MMUN2232LT1  
MMUN2233LT1  
MMUN2234LT1  
MMUN2238LT1  
MMUN2241LT1  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
Total Power Dissipation @ T = 25°C  
(Note 1) Derate above 25°C  
P
D
*200  
1.6  
mW  
mW/°C  
A
DEVICE MARKING AND RESISTOR VALUES  
Device  
Marking  
A8A  
A8B  
A8C  
A8D  
A8E  
A8F  
R1(K)  
10  
R2(K)  
10  
22  
47  
47  
∞
MMUN2211LT1  
MMUN2212LT1  
MMUN2213LT1  
MMUN2214LT1  
MMUN2215LT1  
MMUN2216LT1  
MMUN2230LT1  
MMUN2231LT1  
MMUN2232LT1  
MMUN2233LT1  
MMUN2234LT1  
MMUN2238LT1  
MMUN2241LT1  
22  
47  
10  
10  
4.7  
1.0  
2.2  
4.7  
4.7  
22  
∞
A8G  
A8H  
A8J  
1.0  
2.2  
4.7  
47  
47  
∞
A8K  
A8L  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
A8R  
A8U  
2.2  
100  
∞
1. Device mounted on a FR-4 glass epoxy printed circuit board using the  
minimum recommended footprint.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2004  
Publication Order Number:  
May, 2004 − Rev. 4  
MMUN2211LT1/D  
 
1234567...12

中文翻译

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MMUN2233LT1 替代型号

型号 品牌 替代类型 描述 数据表
SMMUN2233LT1 ONSEMI

类似代替

 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, TO-236, 3 PIN
MMUN2233LT1G ONSEMI

类似代替

 Bias Resistor Transistor
FJN3314RTA FAIRCHILD

功能相似

 NPN Epitaxial Silicon Transistor with Bias Resistor, 3 LD, TO92, MOLDED 0.200 IN LINE SPAC

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 		Digital Transistors (BRT) R1 = 22 k, R2 = 47 k
MMUN2234LT1 MOTOROLA

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MMUN2234LT1 ONSEMI

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