MMST5401

更新时间： 2024-11-18 04:14:59

品牌	Logo	应用领域
TRSYS		晶体晶体管开关光电二极管
页数	文件大小	规格书
1页	104K
描述
Plastic-Encapsulated Transistors

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中文翻译

获取价格

技术参数
数据手册

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MMST5401 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.57
Is Samacsys：	N	Base Number Matches：	1

MMST5401 数据手册

Transys

Electronics

I M I T E D

SOT-323 Plastic-Encapsulated Transistors

SOT-323

MMST5401 TRANSISTOR (PNP)

1. BASE

2. EMITTER

FEATURES

1. 25¡ À0. 05

3. COLLECTOR

Power dissipation

P_CM:

0.2

W (Tamb=25℃)

2. 30¡ À0. 05

Collector current

I_CM:

-0.2

Collector-base voltage

V_(BR)CBO

-160

Operating and storage junction temperature range

Unit: mm

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=-100µA, I_E=0

Ic=-1mA, I_B=0

MIN

-160

-150

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E=-10µA, I_C=0

V_CB=-120V, I_E=0

-50

I_EBO

Emitter cut-off current

V_EB=-3V, I_C=0

h_FE(1)

_CE=-5V, I_C=-1mA

DC current gain

h_FE(2)

_CE=-5V, I_C=-10mA

_CE=-5V, I_C=-50mA

240

h_FE(3)

V_CE(sat)

V_BE(sat)

f_T

I_C=-10mA, I_B=-1mA

I_C=-50mA, I_B=-5mA

-0.2

-0.5

-1

Collector-emitter saturation voltage

Base-emitter voltage

I_C=-10mA, I_B=-1mA

I_C=-50mA, I_B=-5mA

-1

100

300

MHz

Transition frequency

V_CE=-10V, I_C=-10mA, f=100MHz

C_ob

Collector output capacitance

_CB=-10V, I_E=0, f=1MHz

_CE=-5V, I_c=-0.2mA,

Noise figure

f=1KHZ, Rg=10Ω

Marking

K4M

中文翻译

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