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MMST5401
Micro Commercial Components
Features
•
•
•
•
Power dissipation: 200mW (Tamb=25?)
PNP Small Signal
Transistors
Collector current: -0.2A
Marking : K4M
Operating and Storage junction temperature range
-55? to + 150?
•
Case Material:Molded Plastic. UL Flammability
Classificatio Rating 94-0 and MSL Rating 1
SOT-323
A
O
Electrical Characteristics @ 25 C Unless Otherwise Specified
D
Symbol
Parameter
Min
Max
Units
C
(2)
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEO
Collector-Emitter Breakdown Voltage
(IC=-1.0mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=-100uAdc, IE=0)
Collector-Emitter Breakdown Voltage
(IE=-10uAdc, IC=0)
Collector Cutoff Current
-150
-160
-5.0
---
---
---
Vdc
Vdc
C
B
E
B
F
E
---
Vdc
-50
-50
nAdc
nAdc
(VCB=-120Vdc, IE=0Vdc)
Emitter Cutoff Current
IEBO
---
H
G
J
(VEB=-3Vdc, IC=0Vdc)
hFE
DC Current Gain
(IC=-1mAdc, VCE=-5Vdc)
K
50
60
50
---
240
---
---
---
---
(IC=-10mAdc, VCE=-5Vdc)
(IC=-50mAdc, VCE=-5Vdc)
Collector-Emitter Saturation Voltage
(IC=-10mAdc, IB=-1mAdc)
(IC=-50mAdc, IB=-5mAdc)
Base-Emitter Saturation Voltage
(IC=-10mAdc, IB=-1mAdc)
(IC=-50mAdc, IB=-5mAdc)
Current Gain-Bandwidth Product
(VCE=-10Vdc, IC=-10mAdc, f=100MHz)
Output Capacitance
(VCB=-10Vdc, f=1.0MHz, IE=0)
Noise Figure
(VCE=-5V, IC=-0.2mA, f=-1KHz, Rg=10=)
DIMENSIONS
INCHES
MM
VCE(sat)
DIM
A
B
C
D
E
MIN
.071
.045
.079
MAX
.087
.053
.087
MIN
1.80
1.15
2.00
MAX
2.20
1.35
2.20
NOTE
---
---
-0.2
-0.5
Vdc
Vdc
VBE(sat)
.026 Nominal
0.65Nominal
1.20
.30
---
---
-1
-1
.047
.055
.016
.004
.039
.010
.016
1.40
.40
F
.012
.000
.035
.004
.012
G
H
J
.000
.90
.100
.30
.100
1.00
.250
.40
fT
100
---
300
6
MHz
pF
Cob
NF
K
Suggested Solder
Pad Layout
0.70
dB
---
8
0.90
1.90
0.65
0.65
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Revision: 3
2008/01/01
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