MMST5551

更新时间： 2024-02-20 11:58:55

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管
页数	文件大小	规格书
2页	75K
描述
NPN Small Signal Transistors

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中文翻译

获取价格

数据手册

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MMST5551 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

MMST5551

Micro Commercial Components

Features

•

Power dissipation: 200mW (T_amb=25?)

NPN Small Signal

Transistors

Collector current: 0.2A

Marking : K4N

Operating and Storage junction temperature range

-55? to + 150?

•

Case Material:Molded Plastic. UL Flammability

Classificatio Rating 94-0 and MSL Rating 1

SOT-323

Electrical Characteristics @ 25 C Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

(2)

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_CEO

Collector-Emitter Breakdown Voltage

(I_C=1.0mAdc, I_B=0)

Collector-Base Breakdown Voltage

(I_C=100uAdc, I_E=0)

Collector-Emitter Breakdown Voltage

(I_E=10uAdc, I_C=0)

Collector Cutoff Current

(V_CB=35Vdc, I_E=0Vdc)

160

---

Vdc

180

5.0

---

Vdc

nAdc

I_EBO

Emitter Cutoff Current

(V_EB=5Vdc, I_C=0Vdc)

---

h_FE

DC Current Gain

(I_C=1mAdc, V_CE=5Vdc)

---

250

---

(I_C=10mAdc, V_CE=5Vdc)

(I_C=50mAdc, V_CE=5Vdc)

Collector-Emitter Saturation Voltage

(I_C=10mAdc, I_B=1mAdc)

(I_C=50mAdc, I_B=5mAdc)

Base-Emitter Saturation Voltage

(I_C=10mAdc, I_B=1mAdc)

(I_C=50mAdc, I_B=5mAdc)

Current Gain-Bandwidth Product

(V_CE=10Vdc, I_C=20mAdc, f=100MHz)

Output Capacitance

(V_CB=10Vdc, f=1.0MHz, I_E=0)

Noise Figure

(V_CE=5V, I_C=0.2mA, f=1KHz, R_g=10=)

DIMENSIONS

INCHES

V_CE(sat)

DIM

MIN

.071

.045

.079

MAX

.087

.053

.087

MIN

1.80

1.15

2.00

MAX

2.20

1.35

2.20

NOTE

---

0.15

0.2

Vdc

V_BE(sat)

---

.026 Nominal

0.65Nominal

1.20

.30

.047

.055

.016

.004

.039

.010

.016

1.40

.40

.012

.000

.035

.004

.012

f_T

.000

.90

.100

.30

.100

1.00

.250

.40

100

---

300

MHz

C_ob

Suggested Solder

Pad Layout

0.70

---

0.90

1.90

0.65

www.mccsemi.com

Revision: 3

2008/01/01

1 of 2

中文翻译

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