Datasheet > MMST2222A

MMST2222A

更新时间： 2024-11-14 18:09:55

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	502K
描述
SOT-323

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中文翻译

获取价格

数据手册

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MMST2222A 数据手册

MMST2222A

BIPOLAR TRANSISTOR (NPN)

FEATURES

 Complementary to MMST2907A

 Epitaxial planar die construction

 Surface Mount device

SOT-323

MECHANICAL DATA



Case: SOT-323

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

600

°C

200

Junction Temperature

Storage Temperature

150

TSTG

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

I_C=10uA，I_E=0

I =10mA I =0

V(BR)CBO

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

V(BR)CEO

V(BR)EBO

，

I_E=10uA，I_C=0

V_CB=70V, I_E=0

V_CE=30V, I_B=0

V_EB=3V, I_C=0

I_CBO

I_CEO

I_EBO

h_FE1

h_FE2

h_FE3

h_FE4

h_FE5

h_FE6

V_CE(sat)

V_BE(sat)

f_T

100

V_CE=10V, I_C=0.1mA

V_CE=10V, I_C=1mA

V_CE=10V, I_C=10mA

V_CE=10V, I_C=150mA

V_CE=10V, I_C=500mA

V_CE=1V, I_C=150mA

I_C=500mA，I_B=50mA

I_C=150mA，I_B=15mA

I_C=500mA，I_B=50mA

I_C=150mA，I_B=15mA

V_CE=20V,I_C=20mA,f=100

V_CB=10V,I_E=0,f=0.1

MHz

V_CC=30V, I_C=150mA，

V_BE(OFF)=0.5V,I_B1=15mA

V_CC=30V,I_C=150mA

I_B1=I_B2=15mA

DC current gain

300

Collector-emitter saturation voltage

Base-emitter saturation voltage

0.3

2.0

1.2

Transition frequency

Output capacitance

Delay time

300

MHz

C_ob

t_d

t_r

t_S

225

Rise time

Storage time

Fall time

t_f

Marking:K3P

1 / 4

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