MMST2222A-G

更新时间： 2024-02-21 06:37:21

品牌	Logo	应用领域
上华 - COMCHIP		晶体小信号双极晶体管光电二极管
页数	文件大小	规格书
4页	118K
描述
General Purpose Transistor

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技术参数
数据手册

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MMST2222A-G 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.7	Base Number Matches：	1

MMST2222A-G 数据手册

General Purpose Transistor

MMST2222A-G (NPN)

RoHS Device

Features

-Power dissipation

SOT-323

PCM : 0.2W (TA=25 ^OC)

-Collector current

ICM : 0.6A

0.087 (2.20)

0.070 (1.8)

-Collector-base voltage

0.054 (1.35)

0.045 (1.15)

V(BR)CBO : 75V

-Operating and storage junction temperature range

0.056 (1.40)

0.047 (1.20)

TJ, TSTG : -55 C to +150 ^OC

0.006 (0.15)

0.002 (0.05)

Marking: K3P

0.087 (2.20)

0.078 (2.00)

0.044 (1.10)

0.035 (0.90)

Collector

0.004 (0.10) max

0.004 (0.10) min

0.016 (0.40)

0.008 (0.20)

Base

Emitter

Dimensions in inches and (millimeter)

Electrical Characteristics (at TA=25°C unless otherwise noted)

Conditions

Parameter

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

Min

Max

Unit

Collector-Base breakdown voltage

Collector-Emitter breakdown voltage

Emitter-Base breakdown voltage

IC =10μA , IE=0

IC =10mA , IB=0

IE =10μA , IC=0

µA

VCB=70V , IE=0

VCE=35V , IB=0

Collector cut-off current

ICBO

ICEO

0.1

µA

VEB=3V , IC=0

Emitter cut-off current

DC current gain

IEBO

0.1

VCE=10V , IC=150mA

hFE(1)

100

300

VCE=10V , IC=1mA

hFE(2)

Collector-Emitter saturation voltage

Base-Emitter saturation voltage

VCE(sat)

IC=500mA , IB=50mA

0.6

1.2

VBE(sat)

IC=500mA , IB=50mA

VCE=20V , IC=20mA

f=100MHZ

Transition frequency

Output capacitance

300

MHZ

VCB=10V , IE=0

f=1MHZ

Cob

Delay time

Rise time

VCC=30V , IC=150mA

VBE(off)=0.5V , IB1=15mA

Storage time

Fall time

225

VCC=30V , IC=150mA

IB1=IB2=15mA

REV:A

Page 1

QW-BTR06

12 3 4

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