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TM
MMST2222A
Micro Commercial Components
Features
NPN
•
•
•
Power Dissipation: 0.2W
Ultra-small surface mount package
Marking: K3P
Plastic-Encapsulate
Transistors
•
Case Material:Molded Plastic. UL Flammability
Classificatio Rating 94-0 and MSL Rating 1
Maxim um Ratings
Symbol
VCEO
VCBO
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Cut-off Current
(VCB=70V, IE=0)
Rating
40
75
Unit
V
V
SOT-323
A
D
VEBO
6.0
V
C
ICBO
ICEO
IEBO
100
100
100
mA
mA
mA
C
B
Collector Cut-off Current
(VCE=35V, IB=0)
E
B
Emitter Cut-off Current
(VEB=3V, IC=0)
F
E
PC
TJ
Power dissipation (1)
Junction Temperature
200
-55 to +150
-55 to +150
mW
R
Storage Temperature
R
TSTG
O
Electrical Characteristics @ 25 C Unless Otherwise Specified
H
G
J
Symbol
Parameter
Min
Max
Units
K
(2)
OFF CHARACTERISTICS
DIMENSIONS
INCHES
Collector-Emitter Breakdown Voltage
(IC=1.0mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=10mAdc, IE=0)
Collector-Emitter Breakdown Voltage
(IE=10uAdc, IC=0)
(2)
V(BR)CEO
V(BR)CBO
V(BR)EBO
40
75
---
---
---
Vdc
Vdc
Vdc
MM
DIM
A
B
C
D
E
MIN
.071
.045
.079
MAX
.087
.053
.087
MIN
1.80
1.15
2.00
MAX
NOTE
2.20
1.35
2.20
6.0
.026 Nominal
0.65Nominal
1.20
.30
.000
.90
.100
.30
.047
.055
.016
.004
.039
.010
.016
1.40
.40
.100
1.00
.250
.40
ON CHARACTERISTICS
F
.012
.000
.035
.004
.012
DC Current Gain
G
H
J
hFE
---
---
(IC=150mAdc, VCE=10Vdc)
(IC=1.0mAdc, VCE=10Vdc)
Collector-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc)
Base-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc)
Transition Frequency
100
50
300
---
K
VCE(sat)
VBE(sat)
fT
Vdc
Vdc
Hz
---
0.6
Suggested Solder
Pad Layout
0.70
---
1.2
---
300
(VCE=20V, IC=20mA, f=100MHz)
Output Capacitance
(VCB=10V, IE=0mA, f=1MHz)
Delay Time
(VCC=30V , Icc=150mA ,VBE(off)=0.5V,
IB1=15mA)
Rise Time
Cob
---
---
8
pF
0.90
td
tr
10
ns
ns
1.90
(VCC=30V , Icc=150mA ,VBE(off)=0.5V,
---
25
IB1=15mA)
0.65
Storage Time
(VCC=30V , Icc=150mA , IB1=IB2=15mA)
Fall Time
ts
tf
---
---
225
60
ns
ns
0.65
(VCC=30V , Icc=150mA , IB1=IB2=15mA)
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Revision: 3
2008/01/01