Datasheet > MMST2222A_15

MMST2222A_15

更新时间： 2024-11-14 01:24:03

品牌	Logo	应用领域
永而佳 - WINNERJOIN		/
页数	文件大小	规格书
1页	130K
描述
PNP TRANSISTOR

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中文翻译

获取价格

数据手册

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MMST2222A_15 数据手册

RoHS

MMST2222A

SOT-323

1. BASE

MMST2222A

TRANSISTOR (NPN)

2. EMITTER

FEATURES

3. COLLECTOR

1. 25¡ À0. 05

Power dissipation

P_CM:

0.2

W (Tamb=25℃)

2. 30¡ À0. 05

Collector current

I_CM:

Collector-base voltage

0.6

V_(BR)CBO

Operating and storage junction temperature range

Unit: mm

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic= 10µA, I_E=0

MIN

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Ic= 10mA, I_B=0

I_E=10µA, I_C=0

V_CB=70V, I_E=0

0. 1

300

µA

I_CEO

V_CE=35V, I_B=0

Collector cut-off current

I_EBO

V_EB= 3V, I_C=0

Emitter cut-off current

h_FE(1)

V_CE=10V, I_C= 150mA

V_CE=10V, I_C= 1mA

I_C=500 mA, I_B= 50mA

100

DC current gain

h_FE(2)

V_CE(sat)

V_BE(sat)

0.6

1.2

Collector-emitter saturation voltage

Base-emitter saturation voltage

I_C=500 mA, I_B= 50mA

V_CE=20V, I_C= 20mA

300

MHz

Transition frequency

Output Capacitance

f_T

f=100MHz

V_CB=10V, I_E= 0

C_ob

f=1MHz

Delay time

Rise time

t_d

t_r

V_CC=30V, I_C=150mA

V_BE(off)=0.5V, I_B1=15mA

WEJ ELECTRONIC CO.,LTD

225

Storage time

Fall time

t_S

V_CC=30V, I_C=150mA

I_B1= I_B2= 15mA

t_f

Marking

K3P

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

中文翻译

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