Datasheet > MMG15241HT1

MMG15241HT1

更新时间： 2024-11-20 10:51:51

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
18页	761K
描述
Enhancement Mode pHEMT Technology (E-pHEMT)

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数据手册

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MMG15241HT1 数据手册

Document Number: MMG15241H

Rev. 0, 12/2010

Freescale Semiconductor

Technical Data

Enhancement Mode pHEMT

Technology (E--pHEMT)

MMG15241HT1

High Linearity Amplifier

The MMG15241H is a high dynamic range, low noise amplifier MMIC, housed

in a SOT--89 standard plastic package. It is ideal for Cellular, PCS, LTE,

TD--SCDMA, W--CDMA base station, wireless LAN and other systems in the

500 to 2800 MHz frequency range. With high OIP3 and low noise figure, it can

be utilized as a driver amplifier in the transmit chain and as a second stage LNA

in the receive chain.

500--2800 MHz, 15.9 dB

24 dBm

Features

E--pHEMT

•

Frequency: 500--2800 MHz

Noise Figure: 1.6 dB @ 2140 MHz

P1dB: 24 dBm @ 2140 MHz

Small--Signal Gain: 15.9 dB @ 2140 MHz

Third Order Output Intercept Point: 39.4 dBm @ 2140 MHz

Single 5 Volt Supply

Supply Current: 85 mA

CASE 2142--01

SOT--89A

50 Ohm Operation (some external matching required)

Low Cost SOT--89 Surface Mount Package

RoHS Compliant

PLASTIC

In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel.

Table 1. Typical Performance ⁽¹⁾

Table 2. Maximum Ratings

Rating

Supply Voltage

Symbol

Value

Unit

900

Symbol MHz

2140 2600

Characteristic

MHz

MHz Unit

130

Noise Figure

1.2

1.6

1.3

Supply Current

dBm

°C

Input Return Loss

(S11)

IRL

-- 11 . 8 --21.3 --16.9

RF Input Power

Storage Temperature Range

stg

--65 to +150

150

Output Return Loss

(S22)

ORL

--13.4 --16.2 --20.9

(2)

Junction Temperature

°C

2. For reliable operation, the junction temperature should not

Small--Signal Gain

(S21)

20.5

15.9

14.4

exceed 150°C.

Power Output @

1dB Compression

P1db

IIP3

dBm

Third Order Input

Intercept Point

18.2

38.7

23.5

39.4

26.2 dBm

40.6 dBm

Third Order Output

Intercept Point

OIP3

1. V = 5 Vdc, T = 25°C, 50 ohm system, application circuit tuned

for specified frequency.

Table 3. Thermal Characteristics

(3)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

°C/W

Case Temperature 85°C, 5 Vdc, 84 mA, no RF applied

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MMG15241HT1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...18

中文翻译

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