Datasheet > MMG200B065PD6EN

MMG200B065PD6EN

更新时间： 2024-09-14 17:15:35

品牌	Logo	应用领域
宏微 - MACMIC		双极性晶体管
页数	文件大小	规格书
6页	253K
描述
IGBT 模块

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MMG200B065PD6EN 数据手册

MMG200B065PD6EN

650V 200A Three Level Inverter Module

November 2017

Version 01

RoHS Compliant

PRODUCT FEATURES

□ 650V IGBT³CHIP(Trench+Field Stop technology)

□ Low saturation voltage and positive temperature coefficient

□ Low switching losses and short tail current

□ Free wheeling diodes with fast and soft reverse recovery

□ Temperature sense included

APPLICATIONS

□ 3-Level-Applications

□ Solar Applications

□ UPS Systems

IGBT(T1、T2、T3、T4)

ABSOLUTE MAXIMUM RATINGS(T _C=25°C unless otherwise specified)

Symbol

V_CES

Parameter/Test Conditions

Values

Unit

T_J=25℃

Collector Emitter Voltage

Gate Emitter Voltage

650

±20

235

200

400

600

V_GES

T_C=25℃,T_Jmax=175℃

I_C

DC Collector Current

T_C=60℃,T_Jmax=175℃

tp=1ms

I_CM

P_tot

Repetitive Peak Collector Current

Power Dissipation Per IGBT

T_C=25℃, T_Jmax=175℃

Diode(D1～D6) ABSOLUTE MAXIMUM RATINGS (T _C=25°C unless otherwise specified )

Symbol

V_RRM

Parameter/Test Conditions

Values

650

Unit

T_J=25℃

Repetitive Reverse Voltage

Average Forward Current(D1～D4)

Repetitive Peak Forward Current(D1～D4)

(D1～D4)

I_F(AV)

I_FRM

I²t

150

300

tp=1ms

A²S

T_J=125℃, t=10ms, V_R=0V

1450

200

I_F(AV)

Average Forward Current(D5、D6)

Repetitive Peak Forward Current(D5、D6)

(D5、D6)

I_FRM

I²t

tp=1ms

400

A²S

T_J=125℃, t=10ms, V_R=0V

2650

MacMic Science & Technology Co., Ltd.

Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China

Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com

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