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MMDTC123W

更新时间: 2024-11-15 10:51:55
品牌 Logo 应用领域
商升特 - SEMTECH 晶体晶体管
页数 文件大小 规格书
1页 131K
描述
NPN Silicon Epitaxial Planar Digital Transistor

MMDTC123W 数据手册

  
MMDTC123W  
NPN Silicon Epitaxial Planar Digital Transistor  
Collector  
(Output)  
Resistance Values  
R1  
R1 (K) R2 (K)  
2.2 47  
Base  
(Input)  
R2  
Emitter  
(Common)  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Symbol  
Value  
Unit  
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
VCBO  
VCEO  
VEBO  
50  
50  
10  
V
V
V
Positive  
Input Voltage  
+ 12  
- 5  
VI  
V
Negative  
Collector Current  
IC  
Ptot  
Tj  
100  
200  
mA  
Total Power Dissipation  
Junction Temperature  
Storage Temperature Range  
mW  
O
C
150  
O
C
TS  
- 65 to + 150  
O
Characteristics at Ta = 25 C  
Parameter  
Symbol  
Min.  
100  
Typ.  
-
Max.  
-
Unit  
DC Current Gain  
hFE  
ICBO  
ICEO  
IEBO  
-
at VCE = 5 V, IC = 10 mA  
Collector Base Cutoff Current  
at VCB = 50 V  
-
-
-
-
-
-
-
-
100  
1
nA  
µA  
µA  
V
Collector Emitter Cutoff Current  
at VCE = 30 V  
-
Emitter Base Cutoff Current  
at VEB = 5 V  
-
180  
0.1  
0.5  
-
Collector Emitter Saturation Voltage  
at IC = 5 mA, IB = 0.25 mA  
VCEsat  
VI(off)  
VI(on)  
CC  
-
-
Input Off Voltage  
V
at VCE = 5 V, IC = 100 µA  
Input On Voltage  
1.1  
-
V
at VCE = 0.3 V, IC = 5 mA  
Collector Capacitance  
at VCB = 10 V, f = 1 MHz  
2.5  
pF  
Input Resistance  
Resistance Ratio  
R1  
1.54  
17  
2.2  
21  
2.86  
26  
KΩ  
R2/R1  
-
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 28/11/2006  

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