MMDT4124
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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Features
Mechanical Data
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Epitaxial Planar Die Construction
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Case: SOT-363
Case Material: Molded Plastic, “Green” Molding Compound,
Note 6. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
Complementary PNP Type Available (MMDT4126)
Ideal for Medium Power Amplification and Switching
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
"Green" Device (Notes 5 and 6)
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C2
B1
E1
E2
B2
C1
Top View
Device Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Value
30
Unit
V
Collector-Emitter Voltage
25
V
Emitter-Base Voltage
5.0
V
Collector Current – Continuous
(Note 1)
200
mA
Thermal Characteristics
Characteristic
Power Dissipation
Symbol
Value
200
Unit
mW
(Notes 1 & 2)
(Note 1)
PD
Thermal Resistance, Junction to Ambient
Operating and Storage and Temperature Range
625
°C/W
°C
Rθ
JA
-55 to +150
TJ, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
30
25
5.0
⎯
V
V
V
nA
nA
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
⎯
⎯
⎯
50
50
IC = 10μA, IE = 0
IC = 1.0mA, IB = 0
IE = 10μA, IC = 0
VCB = 20V, IE = 0V
VEB = 3.0V, IC = 0V
Emitter Cutoff Current
IEBO
⎯
ON CHARACTERISTICS (Note 4)
360
⎯
0.30
0.95
IC = 2.0mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
IC = 50mA, IB = 5.0mA
IC = 50mA, IB = 5.0mA
120
60
DC Current Gain
hFE
⎯
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Small Signal Current Gain
V
V
VCE(SAT)
VBE(SAT)
⎯
⎯
4.0
8.0
480
⎯
pF
pF
Cobo
Cibo
hfe
⎯
⎯
120
VCB = 5.0V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
VCE = 1.0V, IC = 2.0mA, f = 1.0kHz
VCE = 20V, IC = 10mA, f = 100MHz
VCE = 5.0V, IC = 100μA,
⎯
MHz
Current Gain-Bandwidth Product
300
fT
Noise Figure
NF
5.0
dB
⎯
RS = 1.0kΩ, f = 1.0kHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Maximum combined dissipation.
3. No purposefully added lead.
4. Short duration pulse test used to minimize self-heating effect.
5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
6. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
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www.diodes.com
January 2009
© Diodes Incorporated
MMDT4124
Document number: DS30164 Rev. 10 - 2