Datasheet > MMDT2222A

MMDT2222A

更新时间： 2024-09-09 12:36:43

品牌	Logo	应用领域
永而佳 - WINNERJOIN		晶体晶体管光电二极管
页数	文件大小	规格书
1页	176K
描述
TRANSISTOR (NPN)

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中文翻译

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数据手册

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MMDT2222A 数据手册

RoHS

MMDT2222A

MMDT2222A TRANSISTOR (NPN)

FEATURES

Power dissipation

P_CM:

0.15

W (Tamb=25℃)

Collector current

I_CM:

0.6

Collector-base voltage

V_(BR)CBO

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Ic= 10µA, I_E=0

Ic= 10mA, I_B=0

I_E=10µA, I_C=0

V_CB=60V, I_E=0

0. 01

µA

I_EBO

V_EB= 3V, I_C=0

Emitter cut-off current

h_FE(1)

V_CE=10V, I_C= 0.1mA

V_CE=10V, I_C= 1mA

V_CE=10V, I_C= 10mA

V_CE=10V, I_C= 150mA

V_CE=10V, I_C= 500mA

V_CE=1V, I_C= 150mA

I_C=150 mA, I_B= 15mA

I_C=500 mA, I_B= 50mA

I_C=150 mA, I_B=15mA

I_C=500 mA, I_B= 50mA

V_CE=20V, I_C= 20mA

f=100MHz

h_FE(2)

h_FE(3)

DC current gain

h_FE(4)

100

300

h_FE(5)

h_FE(6)

V_CE(sat)1

V_CE(sat)2

V_BE(sat)1

V_BE(sat)2

0.3

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

0.6

1.2

300

MHz

f_T

C_ob

C_ib

V_CB=10V, I_E= 0

Output Capacitance

f=1MHz

V_EB=0.5V, I_C= 0

Input Capacitance

f=1MHz

V_CE=10V, I_C=100µA

f=1KHz,Rs=1KΩ

Noise Figure

Delay time

Rise time

t_d

t_r

V_CC=30V, I_C=150mA

WEJ ELECTRONIC CO.,LTD

V_BE(off)=0.5V, I_B1=15mA

225

Storage time

Fall time

t_S

t_f

V_CC=30V, I_C=150mA

I_B1= I_B2= 15mA

Marking

:K1P

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

中文翻译

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